Non‐Local Electrostatic Gating Effect in Graphene Revealed by Infrared Nano‐Imaging

Abstract Electrostatic gating lies in the heart of field effect transistor (FET) devices and modern integrated circuits. To achieve efficient gate tunability, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers. Remote control of a FET device through a gate electrode located far away is highly desirable, because it not only reduces the complexity of device fabrication, but also enables the design of novel devices with new functionalities. Here, a non‐local electrostatic gating effect in graphene devices using scanning near‐field optical microscopy (SNOM)—a technique that can probe local charge density in graphene—is reported. Remarkably, the charge density of the graphene region tens of micrometers away from a local gate can be efficiently tuned. The observed non‐local gating effect is initially driven by an in‐plane electric field induced by the quantum capacitance of graphene, and further largely enhanced by adsorbed polarized water molecules. This study reveals a non‐local phenomenon of Dirac electrons, provides a deep understanding of in‐plane screening from Dirac electrons, and paves the way for designing novel electronic devices with remote gate control.