Suppressing the Intrinsic Photoelectric Response of Organic Semiconductors for Highly‐Photostable Organic Transistors

Zhongwu Wang; Yining Ma; Shujing Guo; Liqian Yuan; Yongxu Hu; Yinan Huang; Xiaosong Chen; Deyang Ji; Jinshun Bi; Yong Lei; Cheng Han; Liqiang Li; Wenping Hu

doi:10.1002/smll.202304634

journal article·2023-12

Suppressing the Intrinsic Photoelectric Response of Organic Semiconductors for Highly‐Photostable Organic Transistors

Zhongwu Wang, Yining Ma, Shujing Guo, Liqian Yuan, Yongxu Hu, Yinan Huang, Xiaosong Chen, Deyang Ji, Jinshun Bi, Yong Lei, Cheng Han, Liqiang Li, Wenping Hu

Small· Volume 19· Issue 50

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Abstract

Abstract Suppressing the photoelectric response of organic semiconductors (OSs) is of great significance for improving the operational stability of organic field‐effect transistors (OFETs) in light environments, but it is quite challenging because of the great difficulty in precisely modulating exciton dynamics. In this work, photostable OFETs are demonstrated by designing the micro‐structure of OSs and introducing an electrical double layer at the OS/polyelectrolyte dielectric interface, in which multiple exciton dynamic processes can be modulated. The generation and dissociation of excitons are depressed due to the small light‐absorption area of the microstripe structure and the excellent crystallinity of OSs. At the same time, a highly efficient exciton quenching process is activated by the electrical double layer at the OS/polyelectrolyte dielectric interface. As a result, the OFETs show outstanding tolerance to the light irradiation of up to 306 mW·cm⁻², which far surpasses the solar irradiance value in the atmosphere (≈138 mW·cm⁻²) and achieves the highest photostability ever reported in the literature. The findings promise a general and practicable strategy for the realization of photostable OFETs and organic circuits.

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Research context

Electronic materials

OpenAlex topics: Organic Electronics and Photovoltaics · Conducting polymers and applications · Organic Light-Emitting Diodes Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

SZU‐NUS Collaborative Innovation Center for Optoelectronic Science & Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 China

Key Laboratory of Organic Integrated Circuits of Ministry of Education Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry Institute of Molecular Aggregation Science Tianjin University Tianjin 300072 China

Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

Fachgebiet Angewandte Nanophysik Institut für Physik & IMN MacroNano Technische Universität Ilmenau 98693 Ilmenau Germany

Joint School of National University of Singapore and Tianjin University International Campus of Tianjin University Fuzhou 350207 China

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China · Natural Science Foundation of Tianjin City · China Postdoctoral Science Foundation

References (42)

Show source-provided references

1. 10.1021/acs.chemrev.1c0095510.1021/acs.chemrev.1c00955 ↗

2. 10.1002/adma.20210733010.1002/adma.202107330 ↗

3. 10.1039/C9CS00431A10.1039/C9CS00431A ↗

4. 10.1002/lpor.20200026210.1002/lpor.202000262 ↗

5. 10.1002/smm2.105610.1002/smm2.1056 ↗

6. 10.1021/acsomega.7b0049410.1021/acsomega.7b00494 ↗

7. 10.1038/s41467-021-23914-210.1038/s41467-021-23914-2 ↗

8. 10.1016/j.cclet.2021.04.00510.1016/j.cclet.2021.04.005 ↗

9. 10.1007/s11426-021-1047-710.1007/s11426-021-1047-7 ↗

10. 10.1002/adma.20090113610.1002/adma.200901136 ↗

11. 10.1021/acsami.1c2399410.1021/acsami.1c23994 ↗

12. 10.1002/adma.20190612210.1002/adma.201906122 ↗

13. 10.1007/s11426-021-1118-910.1007/s11426-021-1118-9 ↗

14. 10.1039/C5EE00925A10.1039/C5EE00925A ↗

15. 10.1021/acsami.8b1200910.1021/acsami.8b12009 ↗

16. 10.1038/s41586-021-03840-510.1038/s41586-021-03840-5 ↗

17. 10.1002/adfm.20130178310.1002/adfm.201301783 ↗

18. 10.1002/aelm.20180037510.1002/aelm.201800375 ↗

19. 10.1063/1.275054510.1063/1.2750545 ↗

20. 10.1143/JJAP.46.L119710.1143/JJAP.46.L1197 ↗

21. 10.1002/adfm.20080115510.1002/adfm.200801155 ↗

22. 10.1002/adma.20220333010.1002/adma.202203330 ↗

23. 10.1002/adma.20200228110.1002/adma.202002281 ↗

24. 10.1002/adfm.20220263210.1002/adfm.202202632 ↗

25. 10.1126/sciadv.170118610.1126/sciadv.1701186 ↗

26. 10.1021/acs.chemmater.1c0094610.1021/acs.chemmater.1c00946 ↗

27. 10.1063/1.511641210.1063/1.5116412 ↗

28. 10.1038/s41467-018-05155-y10.1038/s41467-018-05155-y ↗

29. 10.1002/adfm.20180609210.1002/adfm.201806092 ↗

30. 10.1021/am403008b10.1021/am403008b ↗

31. 10.1103/PhysRevB.87.24120210.1103/PhysRevB.87.241202 ↗

32. 10.1126/sciadv.abb265910.1126/sciadv.abb2659 ↗

33. 10.1021/acsphotonics.0c0169310.1021/acsphotonics.0c01693 ↗

34. 10.1038/nmat287210.1038/nmat2872 ↗

35. 10.1021/jp970326310.1021/jp9703263 ↗

36. 10.3389/fchem.2021.69824610.3389/fchem.2021.698246 ↗

37. 10.1002/advs.20200241810.1002/advs.202002418 ↗

38. 10.1002/aelm.20150013610.1002/aelm.201500136 ↗

39. 10.1002/adom.20150056010.1002/adom.201500560 ↗

40. 10.1364/AO.15.00091510.1364/AO.15.000915 ↗

41. 10.1023/A:100497231578310.1023/A:1004972315783 ↗

42. 10.1016/j.optmat.2016.03.04110.1016/j.optmat.2016.03.041 ↗