Coplanar MoS ₂ –MoTe ₂ Heterojunction With the Same Crystal Orientation

Abstract Two‐dimensional (2D) coplanar heterostructure enables high‐performance optoelectronic devices, such as p–n heterojunctions. However, realizing site‐controllable and shape‐specific 2D coplanar heterojunctions composed of two semiconductors with the same crystal orientation still requires the development of new growth methods. Here, a route to fabricate MoS ₂ –MoTe ₂ coplanar heterojunctions with the same crystal orientation is reported by exploiting the properties of phase transition and atomic rearrangement during the growth of 2H‐MoTe ₂ . Raman spectroscopy and electron microscopy techniques reveal the chemical composition and lattice structure of the heterostructure. Both MoS ₂ and MoTe ₂ in the heterojunction are single crystals and have the same lattice orientation, and their shapes can be arbitrarily defined by electron beam lithography. Electrical measurements show that the MoS ₂ and MoTe ₂ channels exhibit n ‐type and p ‐type transfer characteristics, respectively. The coplanar epitaxy technology can be used to prepare more coplanar heterostructures with novel device functions.