High‐Speed Programming of Nanowire‐Gated Carbon‐Nanotube Memory Devices
Source abstract
Abstract
Resistance programming of carbon-nanotube-based optoelectronic memory devices at sub-microsecond speed is demonstrated. The use of silicon nanowires as programming electrodes allows study of the scaling rules of the programming speed and the charge-retention mechanism. Such fast and nonvolatile memory elements have potential for the development of adaptive circuits.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Nanowire Synthesis and Applications · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (28)
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