Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances (Small 14/2022)
Source abstract
Abstract
III-Nitride Optoelectronic Devices In article number 2106757, Lixia Zhao and co-workers review the recent progress of III-nitride (III-N) optoelectronic devices, such as light emitting diodes, photodetectors, solar cells and light photocatalysis, integrated with optical resonances, including surface plasmons, distributed Bragg reflectors and micro cavities. They also give an insightful prospect for the development of future III-N based optoelectronic devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials
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Affiliations
School of Electrical Engineering Tiangong University 399 Binshuixi Road Tianjin 300387 P. R. China
State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences A35 Qinghua East Road Beijing 100083 P. R. China
References
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