journal article·2018-03

Optoelectronics: High‐Performance Photovoltaic Detector Based on MoTe2/MoS2 Van der Waals Heterostructure (Small 9/2018)

Yan Chen, Xudong Wang, Guangjian Wu, Zhen Wang, Hehai Fang, Tie Lin, Shuo Sun, Hong Shen, Weida Hu, Jianlu Wang, Jinglan Sun, Xiangjian Meng, Junhao Chu

Small· Volume 14· Issue 9
Publisher page

Abstract

In article number 1703293, Tie Lin, Weida Hu, Jianlu Wang, and co-workers present a high performance photovoltaic photodetector based on MoTe2/MoS2 Van der Waals heterojunction. The light-induced charge transport under different biases is discussed. As self-powered photodetectors, the vertical 2D p-n junctions achieve a sensitive response and broad detection wavelength range. These properties indicate that 2D van der Waals junctions are promising for application in photo-sensing, on-chip logic circuits and so on.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications

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Affiliations

State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu Tian Road Shanghai 200083 China

University of Chinese Academy of Sciences 19 Yuquan Road Beijing 100049 China

References

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