Optoelectronics: High‐Performance Photovoltaic Detector Based on MoTe2/MoS2 Van der Waals Heterostructure (Small 9/2018)
Source abstract
Abstract
In article number 1703293, Tie Lin, Weida Hu, Jianlu Wang, and co-workers present a high performance photovoltaic photodetector based on MoTe2/MoS2 Van der Waals heterojunction. The light-induced charge transport under different biases is discussed. As self-powered photodetectors, the vertical 2D p-n junctions achieve a sensitive response and broad detection wavelength range. These properties indicate that 2D van der Waals junctions are promising for application in photo-sensing, on-chip logic circuits and so on.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications
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Affiliations
State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu Tian Road Shanghai 200083 China
University of Chinese Academy of Sciences 19 Yuquan Road Beijing 100049 China
References
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