Top‐Down Fabrication of Semiconductor Nanowires with Alternating Structures along their Longitudinal and Transverse Axes

The combined use of “top-down” photolithographic techniques and anisotropic etching or electron-beam evaporation provides a versatile approach to fabricate nanowires of III–V semiconductors (e.g., GaAs) with alternating structures along their longitudinal and transverse axes (see Figure). This method can be easily scaled up to produce nanowires in large-scale quantities, and the resultant nanowires have unique optical properties and potential photonic applications.