Metal‐Induced Gap States at a Carbon‐Nanotube Intramolecular Heterojunction Observed by Scanning Tunneling Microscopy
Source abstract
Abstract
Naturally occurring carbon-nanotube heterojunctions provide a unique opportunity for studying nearly one-dimensional metal–semiconductor (M–S) interfaces. Coupling the nanoscale lateral precision of the ultrahigh-vacuum STM with spatially-resolved electronic measurements enables detailed characterization of a single-walled carbon nanotube M–S junction (see figure) and of the metal-induced gap states present at the interface.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Carbon Nanotubes in Composites · Graphene research and applications · Force Microscopy Techniques and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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