Analysis of Channel Current Noise in Small Nanoscale Metal Oxide Semiconductor Field Effect Transistors

Abstract The shrinkage of metal oxide semiconductor field effect transistor (MOSFET) to the small size of the nanoscale results in changes in their channel current noise composition. This paper determines the channel current noise composition of 90 nm MOSFET through experiments, and according to the device material and noise characteristics analysis, the channel current noise of 90 nm and below is obtained, which not only contains thermal noise and suppressed channel shot noise, but also adds suppressed gate tunneling shot noise and cross‐correlation noise. Then, Monte Carlo simulation of 10 nm MOSFET noise is further used to determine the channel current composition of small size nanoscale devices. Subsequently, based on the device structure and fundamental characteristics of channel current noise, the channel current noise model is established. Finally, this model is employed to analyze the relationship between thermal noise, suppressed shot noise, cross‐correlation noise, and channel current noise in relation to bias parameters and device characteristics. The theoretical results are basically consistent with the experimental and the simulated results, and the channel noise increases with the increase of bias voltage. This achievement holds promise for enhancing the operational efficiency, reliability, and lifetime of nanoscale small‐sized MOSFET devices.