One‐Step Laser‐Induced Oxidation and Doping for Tailored p‐Type Conversion of Al‐Doped TiO₂ (Small 39/2025)

Metal Oxide Semiconductors A laser-assisted oxidation and doping strategy enables one-step formation of Al-doped TiO2, achieving p-type conductivity through selective Al diffusion above the threshold laser power. This method overcomes the intrinsic n-type nature of TiO2, offering a CMOS-compatible route for type conversion. The approach provides precise spatial control, enhanced hole transport, and scalability for next-generation oxide electronics and 3D integration. More in article number 2502139, Hyuk-Jun Kwon and co-workers.