Nanoscale Wet Etching of Molybdenum Interconnects with Organic Solutions

Abstract Molybdenum (Mo) has emerged as a promising material for advanced semiconductor devices, especially in the design and fabrication of interconnects requiring sub‐10 nm metal nanostructures. However, current wet etching methods for Mo using aqueous solutions struggle to achieve smooth etching profiles at such scales. To address this problem, we explore wet chemical etching of patterned Mo nanowires (NWs) using an organic solution: ceric ammonium nitrate (CAN) dissolved in acetonitrile (ACN). In this study, we demonstrate two distinct etching pathways by controlling the reaction temperature: i) digital cyclic scheme at room temperature, with a self‐limiting Mo recess per cycle of ≈1.6 nm, and ii) direct etching at elevated temperature (60 °C), with a time‐controlled Mo recess of ≈2 nm min ⁻¹ . These methods not only offer a highly controllable nanoscale Mo etching but also ensure smooth and uniform etching profiles independent of the crystal grain orientation of the metal.