Space‐Confined Growth of Ultrathin P‐Type GeTe Nanosheets for Broadband Photodetectors

Abstract As p‐type phase‐change degenerate semiconductors, crystalline and amorphous germanium telluride (GeTe) exhibit metallic and semiconducting properties, respectively. However, the massive structural defects and strong interface scattering in amorphous GeTe films significantly reduce their performance. In this work, two‐dimensional (2D) p‐type GeTe nanosheets are synthesized via a specially designed space‐confined chemical vapor deposition (CVD) method, with the thickness of the GeTe nanosheets reduced to 1.9 nm. The space‐confined CVD method improves the crystallinity of ultrathin GeTe by lowering the partial pressure of the reactant gas, resulting in GeTe nanosheets with excellent p‐type semiconductor properties, such as a satisfactory on/off ratio of 10⁵. Temperature‐dependent electrical measurements demonstrate that variable‐range hopping and optical‐phonon‐assisted hopping mechanisms dominate transport behavior at low and high temperatures, respectively. GeTe devices exhibit significantly high responsivity (6589 and 2.2 A W⁻¹ at 633 and 980 nm, respectively) and detectivity (1.67 × 10¹¹ and 1.3 × 10⁸ Jones at 633 and 980 nm, respectively), making them feasible for broadband photodetectors in the visible to near‐infrared range. Furthermore, the fabricated GeTe/WS₂ diode exhibits a rectification ratio of 10³ at zero gate voltage. These satisfactory p‐type semiconductor properties demonstrate that ultrathin GeTe exhibits enormous potential for applications in optoelectronic interconnection circuits.