Wavelength Division Multiplexer Based on Semiconductor Heterostructures Constructed via Nanoarchitectonics

Abstract Obtaining a wavelength division multiplexer (WDM) at the micro/nanometer level is a considerable challenge that holds great potential in optical communication technology owing to the enlarged data‐carrying capacity without laying more fibers. Of the progress that has been made in recent years, one of the most promising methods is to fabricate nanoscale pattern on silicon substrate, forcing signals of different wavelength to enter predesigned channels due to the alternant changes in refractive index. However, it is not an easy task to incorporate light sources into these WDM systems, because of the nonradiative characteristics of silicon itself. This study demonstrates a successful integration of laser signal sources and WDM fully with 1D semiconductor structures. Nanowires from II–VI semiconductor serve as both lasing media and low‐loss waveguides for signal loading and delivering, respectively. On the basis of the distinct size‐dependent cut‐off effect, finely tuning the diameters of homojunctions would result in a controllable filtering of confined signal that light, beyond cut‐off wavelength, cannot transfer within the narrowed segments any longer. These results pave the way for semiconductor photonic components toward integration.