Fullerene‐Derivative‐Embedded Nanogap Field‐Effect‐Transistor and Its Nonvolatile Memory Application

A nanogap field-effect transistor with PCBM, a C60 derivative, is demonstrated, and evidence for nanogap filling is provided. The transistor serves as a charge-based detector to identify the imbibitions of the nanoscale capillary channel originating from the high-electron receptivity of the PCBM. In an extended application, a 2-bit-per-cell nonvolatile memory operation is performed, and the transistor is verified as a promising candidate without interference from adjacent memory cells. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.