Effect of Gamma Irradiation on Dynamics of Charge Exchange Processes between Single Trap and Nanowire Channel
Source abstract
Abstract
Abstract In the present study, transport properties and single trap phenomena in silicon nanowire (NW) field‐effect transistors (FETs) are reported. The dynamic behavior of drain current in NW FETs studied before and after gamma radiation treatment deviates from the predictions of the Shockley–Read–Hall model and is explained by the concept taking into account an additional energy barrier in the accumulation regime. It is revealed that dynamics of charge exchange processes between single trap and nanowire channel strongly depend on gamma radiation treatment. The results represent potential for utilizing single trap phenomena in a number of advanced devices.
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Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Bioelectronics (ICS‐8) Forschungszentrum Jülich 52425 Jülich Germany
Faculty of Radiophysics Electronics and Computer Systems Taras Shevchenko National University of Kyiv 03127 Kyiv Ukraine
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