Stretchable Si Logic Devices with Graphene Interconnects
Source abstract
Abstract
Stretchable integrated circuits consisting of ultrathin Si transistors connected by multilayer graphene are demonstrated. Graphene interconnects act as an effective countervailing component to maintain the electrical performance of Si integrated circuits against external strain. Concentration of the applied strain on the graphene interconnect parts can stably protect the Si active devices against applied strains over 10%. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Advanced Sensor and Energy Harvesting Materials · Graphene and Nanomaterials Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electrical and Electronic Engineering Yonsei University 50 Yonsei‐ro Seodaemun‐gu Seoul 120‐749 South Korea
Department of Nanomechanics Nano‐Convergence Mechanical Systems Research Division Korea Institute of Machinery & Materials (KIMM) 156 Gajungbuk‐ro Yuseong‐gu Daejeon 305‐343 South Korea
Funding
Ministry of Education, Science and Technology and the Research Program of Korea Institute of Machinery & Materials
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