Enhancement‐Mode Silicon Nanowire Field‐Effect Transistors on Plastic Substrates
Source abstract
Abstract
Top-gate field-effect transistors (FETs) with n-channels consisting of n+–p–n+ doped Si nanowires are constructed on plastic substrates via the conventional top-down approach. These top-gate FETs show excellent enhancement-mode characteristics (see image).
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Nanowire Synthesis and Applications · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (24)
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