Wafer‐Scale Patterning of Reduced Graphene Oxide Electrodes by Transfer‐and‐Reverse Stamping for High Performance OFETs

Abstract A wafer‐scale patterning method for solution‐processed graphene electrodes, named the transfer‐and‐reverse stamping method, is universally applicable for fabricating source/drain electrodes of n‐ and p‐type organic field‐effect transistors with excellent performance. The patterning method begins with transferring a highly uniform reduced graphene oxide thin film, which is pre‐prepared on a glass substrate, onto hydrophobic silanized (rigid/flexible) substrates. Patterns of the as‐prepared reduced graphene oxide films are then formed by modulating the surface energy of the films and selectively delaminating the films using an oxygen‐plasma‐treated elastomeric stamp with patterns. Reduced graphene oxide patterns with various sizes and shapes can be readily formed onto an entire wafer. Also, they can serve as the source/drain electrodes for benchmark n‐ and p‐type organic field‐effect transistors with enhanced performance, compared to those using conventional metal electrodes. These results demonstrate the general utility of this technique. Furthermore, this simple, inexpensive, and scalable electrode‐patterning‐technique leads to assembling organic complementary circuits onto a flexible substrate successfully.