journal article·2010-12-20

Mapping Spatial Heterogeneity in Cu(In1−xGax)Se2 Nanocrystal‐Based Photovoltaics with Scanning Photocurrent and Fluorescence Microscopy

David P. Ostrowski, Micah S. Glaz, Brian W. Goodfellow, Vahid A. Akhavan, Matthew G. Panthani, Brian A. Korgel, David A. Vanden Bout

Small· Volume 6· Issue 24
Publisher page

Abstract

Scanning photocurrent and fluorescence microscopy, along with local voltage-dependent photocurrent measurements, are used to study spatial variations in electronic and optical properties across an as-fabricated, functional Cu(In1-xGax)Se2 (CIGS) nanocrystal-based photovoltaic device. Through correlation of local morphological features with spatial variations in device properties, a greater understanding of photovoltaic performance is obtained. Detailed facts of importance to specialist readers are published as "Supporting Information". Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (37)

Show source-provided references
1. 10.1021/ar900238j10.1021/ar900238j ↗
2. 10.1016/S0927-796X(02)00092-X10.1016/S0927-796X(02)00092-X ↗
3. 10.1021/ma061873210.1021/ma0618732 ↗
4. 10.1016/j.solmat.2008.10.00410.1016/j.solmat.2008.10.004 ↗
5. 10.1016/j.solmat.2004.02.03010.1016/j.solmat.2004.02.030 ↗
6. 10.1016/j.cis.2007.09.00110.1016/j.cis.2007.09.001 ↗
7. 10.1016/j.solmat.2004.02.02110.1016/j.solmat.2004.02.021 ↗
8. 10.1002/smll.20060030010.1002/smll.200600300 ↗
9. 10.1002/adma.20080146610.1002/adma.200801466 ↗
10. 10.1021/jp806791s10.1021/jp806791s ↗
11. 10.1021/jp073422510.1021/jp0734225 ↗
12. 10.1063/1.291082610.1063/1.2910826 ↗
13. 10.1021/ma070606910.1021/ma0706069 ↗
14. 10.1021/ac010090610.1021/ac0100906 ↗
15. 10.1021/la011302x10.1021/la011302x ↗
16. 10.1021/ja900636z10.1021/ja900636z ↗
17. 10.1038/nmat171210.1038/nmat1712 ↗
18. 10.1021/nl062989e10.1021/nl062989e ↗
19. 10.1021/ja804069n10.1021/ja804069n ↗
20. 10.1021/nl048176c10.1021/nl048176c ↗
21. 10.1002/pip.79510.1002/pip.795 ↗
22. 10.1002/adma.20050139410.1002/adma.200501394 ↗
23. 10.1021/nl901358v10.1021/nl901358v ↗
24. 10.1021/nn800878c10.1021/nn800878c ↗
25. 10.1021/nl902105f10.1021/nl902105f ↗
26. 10.1002/pip.54210.1002/pip.542 ↗
27. 10.1016/S0927-0248(01)00189-110.1016/S0927-0248(01)00189-1 ↗
28. 10.1016/j.synthmet.2004.06.04210.1016/j.synthmet.2004.06.042 ↗
29. 10.1021/nl048590c10.1021/nl048590c ↗
30. 10.1021/nl034949610.1021/nl0349496 ↗
31. 10.1021/jz900038c10.1021/jz900038c ↗
32. 10.1016/j.physb.2009.09.01010.1016/j.physb.2009.09.010 ↗
33. 10.1002/adfm.20040052810.1002/adfm.200400528 ↗
34. 10.1021/ja805845q10.1021/ja805845q ↗
35. 10.1002/pip.82210.1002/pip.822 ↗
36. 10.1016/j.ssc.2009.04.01410.1016/j.ssc.2009.04.014 ↗
37. B. E.McCandless W. N.Shafarman Chemical Surface Deposition of Ultra‐thin Semiconductors U.S. Patent 6 537 845 March 25 2003.