Self‐Assembly of Carbon‐Nanotube‐Based Single‐Electron Memories

Abstract We demonstrate the wafer‐scale integration of single‐electron memories based on carbon nanotube field‐effect transistors (CNFETs) using a process based entirely on self assembly. First, a “dry” self‐assembly step based on chemical vapor deposition (CVD) allows the growth and connection of CNFETs. Next, a “wet” self‐assembly step is used to attach a single 30‐nm‐diameter gold bead in the nanotube vicinity via chemical functionalization. The bead is used as the memory storage node while the CNFET operating in the subthreshold regime acts as an electrometer exhibiting exponential gain. Below 60 K, the transfer characteristics of gold–CNFETs show highly reproducible hysteretic steps. Evaluation of the capacitance confirms that these current steps originate from the controlled storage of single electrons with a retention time that exceeds 550 s at 4 K.