Top‐Down Fabricated Silicon‐Nanowire‐Based Field‐Effect Transistor Device on a (111) Silicon Wafer

The unique anisotropic wet-etching mechanism of a (111) silicon wafer facilitates the highly controllable top-down fabrication of silicon nanowires (SiNWs) with conventional microfabrication technology. The fabrication process is compatible with the surface manufacturing technique, which is employed to build a nanowire-based field-effect transistor structure on the fabricated SiNW.