Ultra‐Long Carrier Lifetime of Spiral Perovskite Nanowires Realized through Cooperative Strategy of Selective Etching and Passivation

Abstract Spiral inorganic perovskite nanowires (NWs) possess unique morphologies and properties that allow them highly attractive for applications in optoelectronic and catalytic fields. In popular solution‐based synthesis methodology, however, challenges persist in simultaneously achieving precise and facile control over morphological twisting and fantastic carrier lifetimes. Here, a cooperative strategy of concurrently employing selective etching and ligand engineering is applied to facilitate the formation of spiral CsPbBr ₃ perovskite NWs with an ultralong carrier lifetime of ≈2 µs. Specifically, a novel amine of 1‐(p‐tolyl)ethanamine is introduced to functionalize as both a selective etchant and the source of forming an effective ligand to passivate the exposed facets, favoring the structural twisting and the enhancement of carrier lifetimes. The twisting behaviors are dependent on the etch ratios, which are essentially associated with the densities of grain boundaries and dislocations in the NWs. The ultralong carrier lifetime and long‐term stability of the spiral NWs open up new possibilities for all‐inorganic perovskites in optoelectronic and photocatalytic fields, while the cooperative synthesis strategy paves the way for exploring complex spiral structures with tunable morphology and functionality.