Surface Passivation and Energy Alignment Modulation of n‐i‐p Perovskite Solar Cells with Self‐Assembled Molecule
Source abstract
Abstract
Abstract Perovskite's surface defects trigger deep level traps and energy misalignment, resulting in substantial interface recombination and energy loss in perovskite solar cells (PSCs). Herein, 9‐fluoreneacetic acid (FAA), a self‐assembled molecule (SAM), is employed to passivate the interface defects and modulate energy alignment. SAM modification reduces the defect density from 6.37 × 1015 to 3.11 × 1015 cm−3 and produces a p‐type surface with an upward band bending, thus constructing a well‐defined n‐i‐p heterojunction for efficient charge separation. Accordingly, the target PSC realizes 24.75% power conversion efficiency (PCE) and retains 92% for 1100 h during maximum power point tracking (MPPT) at room temperature. Furthermore, over 80% of initial PCE has been reserved after 2500 h aging in 25–30% relative humidity (RH). This SAM strategy is expected to enhance the efficiency and stability for n‐i‐p PSCs.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Quantum Dots Synthesis And Properties · Conducting polymers and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Environment and Energy State Key Laboratory of Luminescent Materials and Devices Institute of Polymer Optoelectronic Materials and Devices Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates AIE Institute South China University of Technology Guangzhou 510000 P. R. China
Key Laboratory for Optoelectronic Information Perception and Instrumentation of Jiangxi Province Key Laboratory of Nondestructive Testing Ministry of Education School of the Testing and Photoelectric Engineering Nanchang Hangkong University Nanchang Nanchang 330063 P. R. China
Hangzhou Zhongneng Optoelectronics Technology Co. Ltd Hangzhou 310000 P. R. China
Funding
National Key Research and Development Program of China
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