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journal article·2025-01Open access

Efficient Polycrystalline Single‐Cation Perovskite Light‐Emitting Diodes by Simultaneous Intracrystal and Interfacial Defect Passivation

Hobeom Kim, Jung‐Min Heo, Christoph Wolf, Young‐Hoon Kim, Seong‐Chul Lee, Eojin Yoon, Geon‐Hui Lee, Kyung Yeon Jang, Junmo Park, Joo Sung Kim, Min‐Ho Park, Su‐Hun Jeong, Himchan Cho, Tae‐Hee Han, Emad Oveisi, Mohammad Khaja Nazeeruddin, Tae‐Woo Lee

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Abstract

Abstract Polycrystalline perovskite light‐emitting diodes (PeLEDs) have shown great promise with high efficiency and easy processability. However, PeLEDs using single‐cation polycrystalline perovskite emitters have demonstrated low efficiency due to defects within the grains and at the interfaces between the perovskite layer and the charge injection contact. Thus, simultaneous defect engineering of perovskites to suppress exciton loss within the grains and at the interfaces is crucial for achieving high efficiency in PeLEDs. Here, 1,8‐octanedithiol which is a strong nucleophile, is used to increase the luminescence efficiency of a single‐cation perovskite by suppressing non‐radiative recombination within the grains of their polycrystalline emitter film as well as at their interface with an anode. The dithiol additive performs a multifunctional role in defect passivation, spatial confinement of excitons, and prevention of exciton quenching at the interface between the perovskite layer and the underlying hole‐injection layer. Photoluminescence studies demonstrate that incorporating the dithiol additive significantly enhances the charge carrier dynamics in perovskites, resulting in an external quantum efficiency (EQE) of up to 23.46% even in a simplified PeLED that does not use a hole‐injection layer. This represents the highest level of EQE achieved among devices utilizing polycrystalline single‐cation perovskites.
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Research context

Energy storageElectronic materials

OpenAlex topics: Perovskite Materials and Applications · Organic Light-Emitting Diodes Research · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering Seoul National University 1 Gwanak‐ro Seoul 08826 Republic of Korea

School of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST) 123 Cheomdangwagi‐ro Gwangju 61005 Republic of Korea

PEROLED Co. Ltd. Building 940, 1 Gwanak‐ro Seoul 08826 Republic of Korea

Institute of Engineering Research Soft Foundry Seoul National University 1 Gwanak‐ro Seoul 08826 Republic of Korea

Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) 77 Cheongam‐ro Pohang 37673 Republic of Korea

Interdisciplinary Centre for Electron Microscopy (CIME) École Polytechnique Fédérale de Lausanne (EPFL) Lausanne CH‐1015 Switzerland

Institute of Chemical Sciences and Engineering École Polytechnique Fédérale de Lausanne (EPFL) Lausanne CH‐1015 Switzerland

Research Institute of Advanced Materials Seoul National University 1 Gwanak‐ro Seoul 08826 Republic of Korea

School of Chemical and Biological Engineering Seoul National University 1 Gwanak‐ro Seoul 08826 Republic of Korea

SN Display Co. Ltd. Building 33, 1 Gwanak‐ro Seoul 08826 Republic of Korea

Funding

National Research Foundation of Korea

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