journal article·2025-12Open access

DPP‐DTT Nanowire Phototransistors for Optoelectronic Synapses in EMG and ECG Signal Classification

Wangmyung Choi, Jin Seok Yoon, Won Woo Lee, Gun Ho Hong, Hyeonjung Kim, Seyong Oh, Young Tea Chun, Hocheon Yoo

Small· Volume 21· Issue 48

Abstract

Abstract A neuromorphic phototransistor based on nanowire‐patterned diketopyrrolo‐pyrrole‐dithienylthieno[3,2‐b]thiophene (DPP‐DTT) is reported. The nanowires, well‐aligned with a width of 460 nm, spacing of 8–11 µm, and height of ≈80 nm, are fabricated using the stamping method of soft lithography and exhibit optically stimulated synaptic behavior. Under blue illumination (455 nm, 0.55 mW cm−2), a photogating effect arises at the DPP‐DTT/SiO2 interface, leading to threshold voltage shifts up to 6.4 V as a result of electron trapping at the interface. Negative gate pulses (−7 V) facilitate recombination of the trapped electrons, inducing detrapping and consequently leading to a decrease in the threshold voltage. These two behaviors effectively emulate the processes of potentiation and depression. Efficient trap–detrapping dynamics are facilitated by the unique geometry of the nanowire. Synaptic plasticity is modulated by adjusting stimulus intensity (light pulse: 0.26–1.42 mW cm −2 , gate pulse: −6–−9 V), duration (0.3–2.1 s), frequency (0.47–3.33 Hz), and repetition (1–40 cycles), supporting transitions from short‐ to long‐term behavior. The device is evaluated through artificial intelligence classification tasks, including image recognition and time‐dependent physiological analysis. It achieves the classification accuracies of 97.4% for MNIST, 93.4% for electromyography (7 classes), 89.0% for electrocardiography (5 classes), and 83.8% for CIFAR‐10.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electronic Engineering Hanyang University 222 Wangsimni‐ro Seoul 04763 Republic of Korea

Division of Electronics and Electrical Information Engineering Korea Maritime and Ocean University 727 Taejong‐ro Busan 49112 Republic of Korea

Department of Artificial Intelligence Semiconductor Engineering Hanyang University 222 Wangsimni ‐ ro Seoul 04763 Republic of Korea

Division of Electrical Engineering Hanyang University ERICA 55 Hanyangdaehak‐ro Ansan 15588 Republic of Korea

Funding

Hanyang University · Korea Basic Science Institute · National Research Foundation of Korea

References (57)

Show source-provided references
1. 10.1038/s41377-022-01031-z10.1038/s41377-022-01031-z ↗
2. 10.1002/aisy.20200009910.1002/aisy.202000099 ↗
3. 10.1126/science.123186510.1126/science.1231865 ↗
4. 10.1126/sciadv.170016010.1126/sciadv.1700160 ↗
5. 10.1021/acs.nanolett.8b0099410.1021/acs.nanolett.8b00994 ↗
6. 10.1002/adom.20140047210.1002/adom.201400472 ↗
7. 10.1002/aisy.20190013610.1002/aisy.201900136 ↗
8. 10.1038/s41928-018-0103-310.1038/s41928-018-0103-3 ↗
9. 10.1021/acs.accounts.8b0055310.1021/acs.accounts.8b00553 ↗
10. 10.1038/nmat485610.1038/nmat4856 ↗
11. 10.1126/science.aao009810.1126/science.aao0098 ↗
12. 10.1002/adma.20240120610.1002/adma.202401206 ↗
13. 10.1039/D0QM00500B10.1039/D0QM00500B ↗
14. 10.1002/adma.20090405410.1002/adma.200904054 ↗
15. C. A.Bower M.Meitl D.Kneeburg InSensors IEEE Valencia Spain2014 pp2111–2113.
16. 10.1038/nprot.2009.23410.1038/nprot.2009.234 ↗
17. 10.1038/s41467-020-14814-y10.1038/s41467-020-14814-y ↗
18. 10.1021/acsami.1c1481610.1021/acsami.1c14816 ↗
19. 10.1021/nl903841a10.1021/nl903841a ↗
20. 10.1021/ja056809z10.1021/ja056809z ↗
21. 10.1002/adfm.20220880710.1002/adfm.202208807 ↗
22. 10.1021/acsnano.8b0329110.1021/acsnano.8b03291 ↗
23. 10.1021/acs.nanolett.6b0010410.1021/acs.nanolett.6b00104 ↗
24. 10.1002/adfm.20201087010.1002/adfm.202010870 ↗
25. 10.1039/C7NJ03505E10.1039/C7NJ03505E ↗
26. 10.1002/smtd.20230025610.1002/smtd.202300256 ↗
27. 10.3390/nano1012236610.3390/nano10122366 ↗
28. Y.Ran W.Lu X.Wang Z.Qin X.Qin G.Lu Z.Hu Y.Zhu L.Bu G.Lu M.Horiz 2023 10 4438.10.1039/D3MH00775H ↗
29. 10.1021/nl070111x10.1021/nl070111x ↗
30. 10.1021/cr200347w10.1021/cr200347w ↗
31. 10.1002/adfm.20210713810.1002/adfm.202107138 ↗
32. 10.3390/electronics1104064810.3390/electronics11040648 ↗
33. 10.1002/adfm.20180047010.1002/adfm.201800470 ↗
34. 10.1038/nature0199610.1038/nature01996 ↗
35. 10.1002/adfm.20220626410.1002/adfm.202206264 ↗
36. 10.1038/s41467-018-05453-510.1038/s41467-018-05453-5 ↗
37. 10.1088/1361-6528/aadf6310.1088/1361-6528/aadf63 ↗
38. 10.1039/c2cp23425d10.1039/c2cp23425d ↗
39. 10.1002/adma.20230809010.1002/adma.202308090 ↗
40. 10.1016/j.apmt.2021.10122310.1016/j.apmt.2021.101223 ↗
41. 10.1038/s41699-021-00274-510.1038/s41699-021-00274-5 ↗
42. T.‐R.Lin L.‐C.Shih P.‐J.Cheng K.‐T.Chen J.‐S.Chen R. S. C.Adv 2020 10 42682.10.1039/D0RA08777G ↗
43. 10.1002/adfm.20242007310.1002/adfm.202420073 ↗
44. 10.1021/acsami.4c1258310.1021/acsami.4c12583 ↗
45. 10.1038/s41467-018-02835-710.1038/s41467-018-02835-7 ↗
46. 10.1038/srep0075410.1038/srep00754 ↗
47. 10.1002/adfm.20150080210.1002/adfm.201500802 ↗
48. 10.1002/adom.20200225610.1002/adom.202002256 ↗
49. 10.1109/TED.2019.296342710.1109/TED.2019.2963427 ↗
50. 10.1002/admi.20210057410.1002/admi.202100574 ↗
51. 10.1002/aelm.20240052710.1002/aelm.202400527 ↗
52. 10.1016/j.apmt.2025.10278410.1016/j.apmt.2025.102784 ↗
53. 10.1021/acsaelm.3c0142010.1021/acsaelm.3c01420 ↗
54. 10.1039/D0TC05738J10.1039/D0TC05738J ↗
55. 10.1016/j.nanoen.2021.10619710.1016/j.nanoen.2021.106197 ↗
56. 10.1002/adma.20230537010.1002/adma.202305370 ↗
57. 10.1002/adma.20230369910.1002/adma.202303699 ↗