journal article·2025-08Open access

Suppressing Thermal‐ and Light‐Induced Photoluminescence Quenching in Perovskite Quantum Dots Through Fluoride Post‐Treatment

Peng Wang, Ke Yang, Lingcai Zhang, Xingliang Dai, Zhizhen Ye, Haiping He, Chao Fan

Small· Volume 21· Issue 31

Abstract

Abstract Perovskite quantum dots (QDs) hold promise for next‐generation display applications but suffer from stability challenges, particularly thermal‐ and light‐induced photoluminescence (PL) quenching. Here, a fluoride post‐treatment (FPT) strategy is developed to address this challenge for CsPbBr 3 QDs embedded in silica matrices (CsPbBr 3 /silica composites). The FPT enables epitaxial growth of BaF 2 shells on CsPbBr 3 surfaces via thermally driven fluoride ion diffusion, which passivates surfaces and suppresses thermal‐ and light‐induced defects in CsPbBr 3 . The FPT‐treated CsPbBr 3 /silica composites exhibit a high PL quantum yield of 94.5%, a complete PL recovery after a thermal cycling (up to 403 K), and retain 95.6% of their initial PL intensity after 1055 h with intense blue light irradiation (350 mW cm −2 ). To the best of the knowledge, these FPT‐treated CsPbBr 3 /silica composites represent the most stable CsPbBr 3 emitters under light aging. Theoretical calculations reveal that the BaF 2 shells elevate the formation energy of bromine vacancies and anchor [PbBr 6 ] octahedra in CsPbBr 3 , thereby inhibiting defect generation. A liquid crystal display (LCD) equipped with these composites achieves a 120% national television system committee color gamut. This work provides a robust route to stabilize CsPbBr 3 QDs for high‐performance LCD applications.
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Research context

OpenAlex topics: Perovskite Materials and Applications · Luminescence Properties of Advanced Materials · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor Materials Zhejiang University Hangzhou 310027 P. R. China

Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications Institute of Wenzhou Zhejiang University Wenzhou 325006 P. R. China

Department of Applied Physics The Hong Kong Polytechnic University Kowloon Hong Kong 999077 P. R. China

Wenzhou XINXINTAIJING Tech. Co. Ltd. Wenzhou 325006 P. R. China

Funding

National Natural Science Foundation of China · Key Research and Development Program of Zhejiang Province · Natural Science Foundation of Zhejiang Province · Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering

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