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journal article·2024-07

Wafer Scale Gallium Nitride Integrated Electrode Toward Robust High Temperature Energy Storage

Songyang Lv, Shouzhi Wang, Jiaoxian Yu, Ge Tian, Guodong Wang, Pengfei An, Kepeng Song, Bo Ma, Yangyang Li, Xiangang Xu, Lei Zhang

Small· Volume 20· Issue 27
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Source abstract

Abstract

Abstract Gallium Nitride (GaN), as the representative of wide bandgap semiconductors, has great prospects in accomplishing rapid charge delivery under high‐temperature environments thanks to excellent structural stability and electron mobility. However, there is still a gap in wafer‐scale GaN single‐crystal integrated electrodes applied in the energy storage field. Herein, Si‐doped GaN nanochannel with gallium oxynitride (GaON) layer on a centimeter scale (denoted by GaN NC) is reported. The Si atoms modulate electronic redistribution to improve conductivity and drive nanochannel formation. Apart from that, the distinctive nanochannel configuration with a GaON layer provides adequate active sites and extraordinary structural stability. The GaN‐based supercapacitors are assembled and deliver outstanding charge storage capabilities at 140 °C. Surprisingly, 90% retention is maintained after 50 000 cycles. This study opens the pathway toward wafer‐scale GaN single‐crystal integrated electrodes with self‐powered characteristics that are compatible with various (opto)‐electronic devices.
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Research context

Energy storageNanomaterialsElectronic materials

OpenAlex topics: Supercapacitor Materials and Fabrication · ZnO doping and properties · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Novel Semiconductors State Key Lab of Crystal Materials Shandong University Jinan 250100 P. R. China

Suzhou Research Institute Shandong University Suzhou 215123 P. R. China

Key Laboratory of Processing and Testing Technology of Glass & Functional Ceramics of Shandong Province School of Materials Science and Engineering Qilu University of Technology (Shandong Academy of Sciences) Jinan 250353 P. R. China

School of Life Sciences Shandong First Medical University & Shandong Academy of Medical Sciences Taian Shandong 271000 P. R. China

Division of Nuclear Technology and Applications Institute of High Energy Physics Chinese Academy of Sciences Beijing 100049 P. R. China

Funding

National Natural Science Foundation of China · Natural Science Foundation of Jiangsu Province · Natural Science Foundation of Guangdong Province · Shenzhen Science and Technology Innovation Program · Natural Science Foundation of Shandong Province

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