Broadband Van‐der‐Waals Photodetector Driven by Ferroelectric Polarization

Abstract The potential for various future industrial applications has made broadband photodetectors beyond visible light an area of great interest. Although most 2D van‐der‐Waals (vdW) semiconductors have a relatively large energy bandgap (>1.2 eV), which limits their use in short‐wave infrared detection, they have recently been considered as a replacement for ternary alloys in high‐performance photodetectors due to their strong light‐matter interaction. In this study, a ferroelectric gating ReS₂/WSe₂ vdW heterojunction‐channel photodetector is presented that successfully achieves broadband light detection (>1300 nm, expandable up to 2700 nm). The staggered type‐II bandgap alignment creates an interlayer gap of 0.46 eV between the valence band maximum (VB_MAX) of WSe₂ and the conduction band minimum (CB_MIN) of ReS₂. Especially, the control of poly(vinylidene fluoride‐trifluoroethylene) (P(VDF‐TrFE)) ferroelectric dipole polarity for a specific wavelength allows a high photoresponsivity of up to 6.9 × 10³ A W⁻¹ and a low dark current below 0.26 nA under the laser illumination with a wavelength of 405 nm in P‐up mode. The achieved high photoresponsivity, low dark current, and full‐range near infrared (NIR) detection capability open the door for next‐generation photodetectors beyond traditional ternary alloy photodetectors.