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journal article·2023-10Open access

Mesoscopic 3D Charge Transport in Solution‐Processed Graphene‐Based Thin Films: A Multiscale Analysis

Alex Boschi, Alessandro Kovtun, Fabiola Liscio, Zhenyuan Xia, Kyung Ho Kim, Samuel Lara Avila, Sara De Simone, Valentina Mussi, Carlo Barone, Sergio Pagano, Marco Gobbi, Paolo Samorì, Marco Affronte, Andrea Candini, Vincenzo Palermo, Andrea Liscio

Small· Volume 19· Issue 42
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Abstract

Abstract Graphene and related 2D material (GRM) thin films consist of 3D assembly of billions of 2D nanosheets randomly distributed and interacting via van der Waals forces. Their complexity and the multiscale nature yield a wide variety of electrical characteristics ranging from doped semiconductor to glassy metals depending on the crystalline quality of the nanosheets, their specific structural organization ant the operating temperature. Here, the charge transport (CT) mechanisms are studied that are occurring in GRM thin films near the metal‐insulator transition (MIT) highlighting the role of defect density and local arrangement of the nanosheets. Two prototypical nanosheet types are compared, i.e., 2D reduced graphene oxide and few‐layer‐thick electrochemically exfoliated graphene flakes, forming thin films with comparable composition, morphology and room temperature conductivity, but different defect density and crystallinity. By investigating their structure, morphology, and the dependence of their electrical conductivity on temperature, noise and magnetic‐field, a general model is developed describing the multiscale nature of CT in GRM thin films in terms of hopping among mesoscopic bricks, i.e., grains. The results suggest a general approach to describe disordered van der Waals thin films.
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Research context

NanomaterialsElectronic materials

OpenAlex topics: Graphene research and applications · 2D Materials and Applications · Thermal properties of materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Consiglio Nazionale delle Ricerche Istituto per la Sintesi Organica e la Fotoreattività (CNR‐ISOF), via Gobetti 101 Bologna 40129 Italy

Istituto Italiano di Tecnologia IIT – CNI Laboratorio NEST piazza S. Silvestro 12 Pisa 56127 Italy

Consiglio Nazionale delle Ricerche Istituto per la Microelettronica e Microsistemi (CNR‐IMM) – Bologna Unit via Gobetti 101 Bologna 40129 Italy

Chalmers University of Technology Department of Industrial and Materials Science Kemivägen 9 Gothenburg 41296 Sweden

Chalmers University of Technology Department of Microtechnology and Nanoscience Kemivägen 9 Gothenburg 41296 Sweden

Physics Department Royal Holloway University of London Egham Surrey TW20 0EX UK

Consiglio Nazionale delle Ricerche Istituto per la Microelettronica e Microsistemi (CNR‐IMM) – Roma Unit via del Fosso del Cavaliere 100 Roma 00133 Italy

Consiglio Nazionale delle Ricerche Istituto per la Microelettronica e Microsistemi (CNR‐IMM) – Lecce Unit SP Lecce‐Monteroni km 1,200 Lecce 73100 Italy

Dipartimento di Fisica “E.R. Caianiello” Università degli Studi di Salerno Via Giovanni Paolo II 132 Fisciano SA 84084 Italy

CNR‐SPIN Salerno and INFN Gruppo Collegato di Salerno c/o Università degli Studi di Salerno Fisciano SA 84084 Italy

CIC nanoGUNE Tolosa Hiribidea 76 Donostia – San Sebastian E‐20018 Spain

Université de Strasbourg CNRS ISIS 8 allée Gaspard Monge Strasbourg 67000 France

Dipartimento di Scienze Fisiche Informatiche e Matematiche (FIM) via Giuseppe Campi 213/a Modena 41125 Italy

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