Novel Semiconductive Ternary Hybrid Heterostructures for Artificial Optoelectronic Synapses

Abstract Synaptic devices that mimic biological synapses are considered as promising candidates for brain‐inspired devices, offering the functionalities in neuromorphic computing. However, modulation of emerging optoelectronic synaptic devices has rarely been reported. Herein, a semiconductive ternary hybrid heterostructure is prepared with a D‐D’‐A configuration by introducing polyoxometalate (POM) as an additional electroactive donor (D’) into a metalloviologen‐based D‐A framework. The obtained material features an unprecedented porous 8‐connected bcu‐net that accommodates nanoscale [α‐SiW₁₂O₄₀]⁴⁻ counterions, displaying uncommon optoelectronic responses. Besides, the fabricated synaptic device based on this material can achieve dual‐modulation of synaptic plasticity due to the synergetic effect of electron reservoir POM and photoinduced electron transfer. And it can successfully simulate learning and memory processes similar to those in biological systems. The result provides a facile and effective strategy to customize multi‐modality artificial synapses in the field of crystal engineering, which opens a new direction for developing high‐performance neuromorphic devices.