Synthesis and Broadband Photodetection of a P‐Type 1D Van der Waals Semiconductor HfSnS₃

Abstract 1D van der Waals (vdW) materials have attracted significant interest in recent years due to their giant anisotropic and weak interlayer‐coupled characters. More 1D vdW materials are urgently to be exploited for satisfying the practice requirement. Herein, the study of 1D vdW ternary HfSnS₃ high‐quality single crystals grown via the chemical vapor transport technique is reported. The Raman vibration modes and band structure of HfSnS₃ are analyzed via DFT calculations. Its strong in‐plane anisotropic is verified by the polarized Raman spectroscopy. The field‐effect transistors (FETs) based on the HfSnS₃ nanowires demonstrate p‐type semiconducting behavior as well as outstanding photoresponse in a broadband range from UV to near‐infrared (NIR) with short response times of ≈0.355 ms, high responsivity of ≈11.5 A W⁻¹, detectivity of ≈8.2 × 10¹¹, external quantum efficiency of 2739%, excellent environmental stability, and repeatability. Furthermore, a typical photoconductivity effect of the photodetector is illustrated. These comprehensive characteristics can promote the application of the p‐type 1D vdW material HfSnS₃ in optoelectronics.