journal article·2023-11Open access

Direct Observation of Photon Induced Giant Band Renormalization in 2D PdSe2 Dichalcogenide by Transient Absorption Spectroscopy

Hualong Chen, Artem Kuklin, Jing Xiao, Omar A. Al‐Hartomy, Ahmed Al‐Ghamdi, Swelm Wageh, Yule Zhang, Hans Ågren, Lingfeng Gao, Han Zhang

Small· Volume 19· Issue 46

Abstract

Abstract Insight into fundamental light‐matter interaction as well as underlying photo‐physical processes is crucial for the development of novel optoelectronic devices. Palladium diselenide (PdSe2), an important representative of emerging 2D noble metal dichalcogenides, has gain considerable attention owing to its unique optical, physical, and chemical properties. In this study, 2D PdSe2 nanosheets (NSs) are prepared using the liquid‐phase exfoliation method. A broadband carrier relaxation dynamics from visible to near‐infrared bands are revealed using a time‐resolved transient absorption spectrometer, giving results that indicate band filling and bandgap renormalization (BGR) effects in the 2D PdSe2 NSs. The observed blue‐shift of the transient absorption spectra at the primary stage and the subsequent red‐shift can be ascribed to this BGR effect. These findings reveal the many‐body character of the 2D TMDs material and may hold keys for applications in the field of optoelectronics and ultrafast photonics.
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Research context

OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 China

Department of Physics and Astronomy Uppsala University Uppsala SE‐75120 Sweden

College of Physics and Electronic Engineering Taishan University Taian 271000 China

Department of Physics Faculty of Science King Abdulaziz University Jeddah 21589 Saudi Arabia

College of Material Chemistry and Chemical Engineering Key Laboratory of Organosilicon Chemistry and Material Technology Ministry of Education Key Laboratory of Organosilicon Material Technology Hangzhou Normal University Hangzhou 311121 China

Funding

National Natural Science Foundation of China · Natural Science Foundation of Zhejiang Province · China Postdoctoral Science Foundation · Vetenskapsrådet

References (58)

Show source-provided references
1. 10.1038/s41377-020-00430-410.1038/s41377-020-00430-4 ↗
2. 10.1021/acsnano.5b0648810.1021/acsnano.5b06488 ↗
3. 10.1002/smll.20190272810.1002/smll.201902728 ↗
4. 10.1002/adma.20200412910.1002/adma.202004129 ↗
5. 10.1103/PhysRevB.89.20140810.1103/PhysRevB.89.201408 ↗
6. 10.1039/C6RA22496B10.1039/C6RA22496B ↗
7. 10.1002/lpor.20190036710.1002/lpor.201900367 ↗
8. 10.1021/nn301572c10.1021/nn301572c ↗
9. 10.1021/acsphotonics.6b0007910.1021/acsphotonics.6b00079 ↗
10. 10.1021/acsnano.0c0760810.1021/acsnano.0c07608 ↗
11. 10.1016/j.mtnano.2023.10034910.1016/j.mtnano.2023.100349 ↗
12. 10.1021/nn403886t10.1021/nn403886t ↗
13. 10.1021/nn504760x10.1021/nn504760x ↗
14. 10.1515/nanoph-2020-026710.1515/nanoph-2020-0267 ↗
15. 10.1002/adma.20180760910.1002/adma.201807609 ↗
16. 10.1021/acs.nanolett.2c0209910.1021/acs.nanolett.2c02099 ↗
17. 10.1002/aelm.20200009410.1002/aelm.202000094 ↗
18. 10.1039/D0NR05897A10.1039/D0NR05897A ↗
19. 10.1021/acs.chemmater.5b0422410.1021/acs.chemmater.5b04224 ↗
20. 10.1002/adma.20140515010.1002/adma.201405150 ↗
21. 10.1002/adfm.20200677410.1002/adfm.202006774 ↗
22. 10.1021/ic035239610.1021/ic0352396 ↗
23. 10.1063/1.493330210.1063/1.4933302 ↗
24. 10.1021/acsnano.9b0399410.1021/acsnano.9b03994 ↗
25. 10.1007/s12274-020-2815-810.1007/s12274-020-2815-8 ↗
26. 10.1002/adma.20160296910.1002/adma.201602969 ↗
27. 10.1103/PhysRevB.104.13410910.1103/PhysRevB.104.134109 ↗
28. 10.1103/PhysRevB.99.24511410.1103/PhysRevB.99.245114 ↗
29. 10.1039/D0CP00979B10.1039/D0CP00979B ↗
30. 10.1002/adfm.20180687810.1002/adfm.201806878 ↗
31. 10.1021/jacs.7b0486510.1021/jacs.7b04865 ↗
32. 10.1063/1.509782510.1063/1.5097825 ↗
33. 10.1016/0022-3697(65)90140-X10.1016/0022-3697(65)90140-X ↗
34. 10.1103/PhysRevB.103.16541910.1103/PhysRevB.103.165419 ↗
35. 10.1039/C9NR03101D10.1039/C9NR03101D ↗
36. 10.1088/2053-1583/ac255a10.1088/2053-1583/ac255a ↗
37. 10.1002/smll.20200075410.1002/smll.202000754 ↗
38. 10.1039/C5NR08384B10.1039/C5NR08384B ↗
39. 10.1039/D0NR05935H10.1039/D0NR05935H ↗
40. 10.1021/acs.nanolett.8b0055110.1021/acs.nanolett.8b00551 ↗
41. 10.1002/smll.20200591310.1002/smll.202005913 ↗
42. Gao L. · Adv. Funct. Mater. · 2021 · 31
43. 10.1021/acsnano.5b0480410.1021/acsnano.5b04804 ↗
44. 10.1021/nl503636c10.1021/nl503636c ↗
45. 10.1063/1674-0068/31/cjcp180201810.1063/1674-0068/31/cjcp1802018 ↗
46. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
47. 10.1103/PhysRevB.47.55810.1103/PhysRevB.47.558 ↗
48. 10.1103/PhysRevB.83.19513110.1103/PhysRevB.83.195131 ↗
49. 10.1103/PhysRevB.50.1795310.1103/PhysRevB.50.17953 ↗
50. 10.1103/PhysRev.139.A79610.1103/PhysRev.139.A796 ↗
51. 10.1103/PhysRevB.34.539010.1103/PhysRevB.34.5390 ↗
52. 10.1016/j.cpc.2007.11.01610.1016/j.cpc.2007.11.016 ↗
53. 10.1103/PhysRevLett.80.451410.1103/PhysRevLett.80.4514 ↗
54. 10.1103/PhysRevLett.80.451010.1103/PhysRevLett.80.4510 ↗
55. 10.1103/PhysRevLett.81.231210.1103/PhysRevLett.81.2312 ↗
56. 10.1002/wcms.141110.1002/wcms.1411 ↗
57. 10.1103/PhysRevLett.95.16300110.1103/PhysRevLett.95.163001 ↗
58. 10.1021/ct400641n10.1021/ct400641n ↗