High Efficiency Near‐Infrared Perovskite Light Emitting Diodes With Reduced Rolling‐Off by Surface Post‐Treatment

Abstract The rolling‐off phenomenon of device efficiency at high current density caused by quenching of luminescence in perovskite light‐emitting diodes (PeLED) is challenging to be solved. Here, 2‐amino‐5‐iodopyrazine (AIPZ) is dissolved in a mixed solvent of chlorobenzene (CB)/isopropanol (IPA) (7:3 volume ratio) for surface post‐treatment of FAPbI₃ perovskite film. The interaction of AIPZ and perovskite surface not only balances the charge injection but also passivates defects to enhance radiative recombination in PeLED. Therefore, the PeLED champion yields peak external quantum efficiency reaching 23.2% at the current density of 45 mA cm⁻² with a radiance brightness of 290 W sr⁻¹ m⁻². More importantly, the rolling‐off of device efficiency is significantly reduced. The lowest rolling‐off devices can maintain 80% of peak EQE (22.1%) at a high current density of 460 mA cm⁻², whereas the control device only retains 25% of the peak EQE value. This work provides an effective strategy to improve performance and reduce the EQE rolling‐off of PeLED for practical application.