Charge Transfer Properties of Heterostructures Formed by Bi₂O₂Se and Transition Metal Dichalcogenide Monolayers

Abstract Atomically thin bismuth oxyselenide (Bi₂O₂Se) exhibits attractive properties for electronic and optoelectronic applications, such as high charge‐carrier mobility and good air stability. Recently, the development of Bi₂O₂Se‐based heterostructures have attracted enormous interests with promising prospects for diverse device applications. Although the electrical properties of Bi₂O₂Se‐based heterostructures have been widely studied, the interlayer charge transfer in these heterostructures remains elusive, despite its importance in harnessing their emergent functionalities. Here, a comprehensive experimental investigation on the interlayer charge transfer properties of two heterostructures formed by Bi₂O₂Se and representative transition metal dichalcogenides (namely, WS₂/Bi₂O₂Se and MoS₂/Bi₂O₂Se) is reported. Kelvin probe force microscopy is used to measure the work functions of the samples, which are further employed to establish type‐II band alignment of both heterostructures. Photoluminescence quenching is observed in each heterostructure, suggesting high charge transfer efficiency. Time‐resolved and layer‐selective pump–probe measurements further prove the ultrafast interlayer charge transfer processes and formation of long‐lived interlayer excitons. These results establish the feasibility of integrating 2D Bi₂O₂Se with other 2D semiconductors to fabricate heterostructures with novel charge transfer properties and provide insight for understanding the performance of optoelectronic devices based on such 2D heterostructures.