Source abstract
Abstract
Abstract Antimony selenosulfide (Sb 2 (S,Se) 3 ) is an emerging quasi‐1D photovoltaic semiconductor with exceptional photoelectric properties. The low‐symmetry chain structure contains complex defects and makes it difficult to improve electrical properties via doping method. This article reports a doping strategy to enhance the efficiency of Sb 2 (S,Se) 3 solar cells by using alkali halide (CsI) as the hydrothermal reaction precursor. It is found that the Cs and I ions are effectively doped and atomically coordinate with Sb ions and S/Se ions. The CsI‐doping Sb 2 (S,Se) 3 absorbers exhibit enhanced grain morphologies and reduced trap densities. The consequential CsI‐doping Sb 2 (S,Se) 3 based solar cells demonstrate favorable band alignment, suppressed carrier recombination, and improved device performance. An efficiency as high as 10.05% under standard AM1.5 illumination irradiance is achieved. This precursor‐based alkali halide doping strategy provides a useful guidance for high‐efficiency antimony selenosulfide solar cells.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Perovskite Materials and Applications · Solid-state spectroscopy and crystallography
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electronic Engineering College of Information Science and Technology Jinan University Guangzhou 510632 China
Institute of New Energy Technology College of Physics & Optoelectronic Engineering Jinan University Guangzhou 510632 China
Institute of Applied Physics and Materials Engineering University of Macau Macao Macao SAR 999078 China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China · Natural Science Foundation of Guangdong Province · Fundamental Research Funds for the Central Universities
References (33)
Show source-provided references
10. Wang X. · Adv. Electron. Mater. · 2020 · 10
24. Sites J. · Sol. RRL · 1989 · 27 · 411