Recent Advances in Multi‐Layer Light‐Emitting Heterostructure Transistors

Abstract Light‐emitting transistors (LETs) have attracted tremendous academic and industrial interest due to their dual functions of electrical switching and light emission in a single device, which can considerably reduce system complexity and manufacturing costs, especially in the area of flat panel and flexible displays as well as lighting and lasers. In recent years, enhanced LET performance has been achieved by introducing multiple‐layer heterostructures in the charge‐carrying/light‐emitting LET channel versus the best‐reported performance in single active layer LETs, rendering multi‐layer LETs promising candidates for next‐generation display technologies. In this review, the fundamental structures and working principles of multi‐layer heterostructure LETs are introduced. Next, developments in multi‐layer LETs are discussed based on co‐planar LETs, non‐planar LETs, and vertical LETs including organic, quantum dot, and perovskite light emitters. Finally, this review concludes with a summary and a perspective on the future of this research field.