journal article·2023-09Open access

Ultrathin Crystalline Silicon Nano and Micro Membranes with High Areal Density for Low‐Cost Flexible Electronics

Ju Young Lee, Jongwoon Shin, Kyubeen Kim, Jeong Eun Ju, Ankan Dutta, Tae Soo Kim, Young Uk Cho, Taemin Kim, Luhing Hu, Won Kyung Min, Hyun‐Suh Jung, Young Sun Park, Sang Min Won, Woon‐Hong Yeo, Jooho Moon, Dahl‐Young Khang, Hyun Jae Kim, Jong‐Hyun Ahn, Huanyu Cheng, Ki Jun Yu, John A. Rogers

Small· Volume 19· Issue 39

Abstract

Abstract Ultrathin crystalline silicon is widely used as an active material for high‐performance, flexible, and stretchable electronics, from simple passive and active components to complex integrated circuits, due to its excellent electrical and mechanical properties. However, in contrast to conventional silicon wafer‐based devices, ultrathin crystalline silicon‐based electronics require an expensive and rather complicated fabrication process. Although silicon‐on‐insulator (SOI) wafers are commonly used to obtain a single layer of crystalline silicon, they are costly and difficult to process. Therefore, as an alternative to SOI wafers‐based thin layers, here, a simple transfer method is proposed for printing ultrathin multiple crystalline silicon sheets with thicknesses between 300 nm to 13 µm and high areal density (>90%) from a single mother wafer. Theoretically, the silicon nano/micro membrane can be generated until the mother wafer is completely consumed. In addition, the electronic applications of silicon membranes are successfully demonstrated through the fabrication of a flexible solar cell and flexible NMOS transistor arrays.
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Research context

OpenAlex topics: Nanowire Synthesis and Applications · Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Electrical and Electronic Engineering Yonsei University 50 Yonsei‐ro, Seodaemungu Seoul 03722 Republic of Korea

Department of Engineering Science and Mechanics The Pennsylvania State University University Park PA 16802 USA

Center for Opto‐Electronic Materials and Devices Post‐Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST) Seongbuk‐gu Seoul 02792 South Korea

Department of Materials Science and Engineering Yonsei University 50 Yonsei‐ro Seoul 03722 Republic of Korea

Department of Electrical and Computer Engineering Sungkyunkwan University Seongbuk‐gu Suwon 16419 Republic of Korea

George W. Woodruff School of Mechanical Engineering Georgia Institute of Technology Atlanta GA 30332 USA

IEN Center for Human‐Centric Interfaces and Engineering at the Institute for Electronics and Nanotechnology Georgia Institute of Technology Atlanta GA 30332 USA

Wallace H. Coulter Department of Biomedical Engineering Parker H. Petit Institute for Bioengineering and Biosciences Georgia Institute of Technology Atlanta GA 30332 USA

Institute for Materials Neural Engineering Center Institute for Robotics and Intelligent Machines Georgia Institute of Technology Atlanta GA 30332 USA

Department of Materials Science and Engineering The Pennsylvania State University University Park PA 16802 USA

Materials Research Institute The Pennsylvania State University University Park PA 16802 USA

YU‐Korea Institute of Science and Technology (KIST) Institute Yonsei University 50 Yonsei‐ro, Seodaemun‐gu Seoul 03722 Republic of Korea

Querrey Simpson Institute for Bioelectronics Northwestern University Evanston IL 60208 USA

Department of Biomedical Engineering Northwestern University Evanston IL 60208 USA

Department of Materials Science and Engineering Northwestern University Evanston IL 60208 USA

Department of Neurological Surgery Northwestern University Feinberg School of Medicine Chicago IL 60611 USA

Funding

National Research Foundation of Korea

References (86)

Show source-provided references
1. 10.1038/s41586-021-03295-810.1038/s41586-021-03295-8 ↗
2. 10.1038/s41467-020-20016-310.1038/s41467-020-20016-3 ↗
3. 10.1038/s41528-022-00154-y10.1038/s41528-022-00154-y ↗
4. 10.1038/s41587-019-0045-y10.1038/s41587-019-0045-y ↗
5. 10.1002/adfm.20201099110.1002/adfm.202010991 ↗
6. 10.1002/adma.20160615110.1002/adma.201606151 ↗
7. 10.1126/sciadv.150185610.1126/sciadv.1501856 ↗
8. 10.1038/s41928-018-0162-510.1038/s41928-018-0162-5 ↗
9. 10.1002/adma.20210586510.1002/adma.202105865 ↗
10. 10.1016/j.xpro.2022.10192510.1016/j.xpro.2022.101925 ↗
11. 10.1038/s41528-022-00178-410.1038/s41528-022-00178-4 ↗
12. 10.1002/adma.20200578610.1002/adma.202005786 ↗
13. 10.1002/adfm.20210556810.1002/adfm.202105568 ↗
14. 10.1038/s41528-022-00219-y10.1038/s41528-022-00219-y ↗
15. 10.1038/nmat289610.1038/nmat2896 ↗
16. 10.1002/adma.20060222310.1002/adma.200602223 ↗
17. 10.3390/mi906026310.3390/mi9060263 ↗
18. 10.1002/adma.20090319310.1002/adma.200903193 ↗
19. 10.1039/B916582G10.1039/B916582G ↗
20. 10.1038/s41528-017-0003-z10.1038/s41528-017-0003-z ↗
21. 10.1002/adma.20080081910.1002/adma.200800819 ↗
22. 10.1002/adma.20170760010.1002/adma.201707600 ↗
23. 10.1039/C8QI00366A10.1039/C8QI00366A ↗
24. 10.3390/nano1205074110.3390/nano12050741 ↗
25. 10.1021/acsenergylett.7b0063310.1021/acsenergylett.7b00633 ↗
26. 10.1002/adma.20110322810.1002/adma.201103228 ↗
27. 10.1039/C1JM14452A10.1039/C1JM14452A ↗
28. 10.1002/adma.20090405410.1002/adma.200904054 ↗
29. 10.1126/scitranslmed.300073810.1126/scitranslmed.3000738 ↗
30. 10.1002/adfm.20160600510.1002/adfm.201606005 ↗
31. 10.1002/adma.20170626210.1002/adma.201706262 ↗
32. 10.1016/j.mattod.2016.10.00210.1016/j.mattod.2016.10.002 ↗
33. 10.1038/natrevmats.2017.3310.1038/natrevmats.2017.33 ↗
34. 10.3390/ma1503101210.3390/ma15031012 ↗
35. 10.3390/ma1107116310.3390/ma11071163 ↗
36. 10.1039/D0NA00822B10.1039/D0NA00822B ↗
37. 10.1002/cssc.20110017710.1002/cssc.201100177 ↗
38. 10.1021/acsami.6b0677010.1021/acsami.6b06770 ↗
39. 10.1016/j.mee.2015.04.01310.1016/j.mee.2015.04.013 ↗
40. 10.1002/adom.20150040210.1002/adom.201500402 ↗
41. 10.1021/nl402230v10.1021/nl402230v ↗
42. 10.1126/science.115436710.1126/science.1154367 ↗
43. 10.1021/acsnano.7b0669710.1021/acsnano.7b06697 ↗
44. 10.1038/nature1231410.1038/nature12314 ↗
45. 10.1016/0165-1633(91)90135-810.1016/0165-1633(91)90135-8 ↗
46. 10.1038/nn.297310.1038/nn.2973 ↗
47. 10.1063/1.274229410.1063/1.2742294 ↗
48. 10.1002/adfm.20160528610.1002/adfm.201605286 ↗
49. 10.1126/scitranslmed.aay468210.1126/scitranslmed.aay4682 ↗
50. 10.1038/s41551-018-0300-410.1038/s41551-018-0300-4 ↗
51. 10.1038/s41551-017-003810.1038/s41551-017-0038 ↗
52. 10.1002/pip.104810.1002/pip.1048 ↗
53. 10.1063/1.480300910.1063/1.4803009 ↗
54. 10.1016/j.solmat.2010.11.03110.1016/j.solmat.2010.11.031 ↗
55. 10.1021/nl061846p10.1021/nl061846p ↗
56. 10.1063/1.220668810.1063/1.2206688 ↗
57. Yoon J. · 2011 · 38
58. 10.1002/adfm.20060116110.1002/adfm.200601161 ↗
59. 10.1063/1.480413910.1063/1.4804139 ↗
60. 10.1186/1556-276X-8-13710.1186/1556-276X-8-137 ↗
61. 10.1016/j.mssp.2003.09.00310.1016/j.mssp.2003.09.003 ↗
62. 10.1149/1.208627710.1149/1.2086277 ↗
63. 10.1038/nature1038110.1038/nature10381 ↗
64. 10.1126/science.112140110.1126/science.1121401 ↗
65. 10.1038/nmat462410.1038/nmat4624 ↗
66. 10.1016/S0927-0248(01)00147-710.1016/S0927-0248(01)00147-7 ↗
67. 10.1038/nnano.2013.27110.1038/nnano.2013.271 ↗
68. 10.1038/539488a10.1038/539488a ↗
69. 10.1039/C9EE03046H10.1039/C9EE03046H ↗
70. 10.1002/aenm.20190141910.1002/aenm.201901419 ↗
71. 10.1002/adhm.20160022210.1002/adhm.201600222 ↗
72. 10.1002/aenm.20130054210.1002/aenm.201300542 ↗
73. 10.1038/nmat262910.1038/nmat2629 ↗
74. 10.3390/electronics403048010.3390/electronics4030480 ↗
75. 10.1016/j.actamat.2018.01.00810.1016/j.actamat.2018.01.008 ↗
76. 10.1021/nl302735f10.1021/nl302735f ↗
77. 10.1021/acssensors.7b0004710.1021/acssensors.7b00047 ↗
78. 10.1126/sciadv.150110110.1126/sciadv.1501101 ↗
79. 10.1002/admt.20200007110.1002/admt.202000071 ↗
80. 10.1016/j.coelec.2021.10081110.1016/j.coelec.2021.100811 ↗
81. 10.1021/acsaelm.0c0048910.1021/acsaelm.0c00489 ↗
82. 10.1021/acsnano.8b0741310.1021/acsnano.8b07413 ↗
83. Rao A. · Nano · 2017 · 5 · 23
84. 10.1016/j.sse.2004.11.01110.1016/j.sse.2004.11.011 ↗
85. 10.1016/j.radmeas.2014.12.00810.1016/j.radmeas.2014.12.008 ↗
86. 10.1115/1.402530510.1115/1.4025305 ↗