journal article·2014-05-27

Electron-Doping-Enhanced Trion Formation in Monolayer Molybdenum Disulfide Functionalized with Cesium Carbonate

Jia Dan Lin, Cheng Han, Fei Wang, Rui Wang, Du Xiang, Shiqiao Qin, Xue-Ao Zhang, Li Wang, Hua Zhang, Andrew Thye Shen Wee, Wei Chen

ACS Nano· Volume 8· Issue 5
Publisher page

Abstract

We report effective and stable electron doping of monolayer molybdenum disulfide (MoS2) by cesium carbonate (Cs2CO3) surface functionalization. The electron charge carrier concentration in exfoliated monolayer MoS2 can be increased by about 9 times after Cs2CO3 functionalization. The n-type doping effect was evaluated by in situ transport measurements of MoS2 field-effect transistors (FETs) and further corroborated by in situ ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and Raman scattering measurements. The electron doping enhances the formation of negative trions (i.e., a quasiparticle comprising two electrons and one hole) in monolayer MoS2 under light irradiation and significantly reduces the charge recombination of photoexcited electron-hole pairs. This results in large photoluminescence suppression and an obvious photocurrent enhancement in monolayer MoS2 FETs.
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Research context

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

College of Science, National University of Defense Technology, Changsha 410073, China

Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542

College of Physics and Electronics, Central South University, Changsha, Hunan 410073, China

Institute for Advanced Study and Department of Physics, Nanchang University, 999 Xue Fu Da Dao, Nanchang, China

School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798

Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117542

Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543

References (44)

Show source-provided references
1. Butler S. Z. · ACS Nano · 2013 · 7 · 289810.1021/nn400280c ↗
2. Chhowalla M. · Nat. Chem. · 2013 · 5 · 26310.1038/nchem.1589 ↗
3. Fang H. · Nano Lett. · 2012 · 12 · 378810.1021/nl301702r ↗
4. Gutiérrez H. R. · Nano Lett. · 2013 · 13 · 344710.1021/nl3026357 ↗
5. Wang Q. H. · Nat. Nanotechnol. · 2012 · 7 · 69910.1038/nnano.2012.193 ↗
6. Xiao D. · Phys. Rev. Lett. · 2012 · 108 · 19680210.1103/PhysRevLett.108.196802 ↗
7. Yin Z. Y. · ACS Nano · 2012 · 6 · 7410.1021/nn2024557 ↗
8. Lin J. · Appl. Phys. Lett. · 2013 · 102 · 20310910.1063/1.4807658 ↗
9. Lee H. S. · Nano Lett. · 2012 · 12 · 369510.1021/nl301485q ↗
10. Kibsgaard J. · Nat. Mater. · 2012 · 11 · 96310.1038/nmat3439 ↗
11. Zong X. · J. Phys. Chem. C · 2010 · 114 · 196310.1021/jp904350e ↗
12. Radisavljevic B. · Nat. Nanotechnol. · 2011 · 6 · 14710.1038/nnano.2010.279 ↗
13. Yu W. J. · Nat. Mater. · 2013 · 12 · 24610.1038/nmat3518 ↗
14. Mak K. F. · Nat. Nanotechnol. · 2012 · 7 · 49410.1038/nnano.2012.96 ↗
15. Huang X. · Chem. Soc. Rev. · 2013 · 42 · 193410.1039/c2cs35387c ↗
16. Huang X. · Adv. Mater. · 2014 · 26 · 218510.1002/adma.201304964 ↗
17. Huang X. · Nat. Commun. · 2013 · 4 · 144410.1038/ncomms2472 ↗
18. Kasowski R. · Phys. Rev. Lett. · 1973 · 30 · 117510.1103/PhysRevLett.30.1175 ↗
19. Lebègue S. · Phys. Rev. B · 2009 · 79 · 11540910.1103/PhysRevB.79.115409 ↗
20. Lee K. · Adv. Mater. · 2011 · 23 · 417810.1002/adma.201101013 ↗
21. Zeng Z. · Angew. Chem., Int. Ed. · 2011 · 50 · 1109310.1002/anie.201106004 ↗
22. Lee Y.-H. · Adv. Mater. · 2012 · 24 · 232010.1002/adma.201104798 ↗
23. Shi Y. · Nano Lett. · 2012 · 12 · 278410.1021/nl204562j ↗
24. Mak K. F. · Phys. Rev. Lett. · 2010 · 105 · 13680510.1103/PhysRevLett.105.136805 ↗
25. Splendiani A. · Nano Lett. · 2010 · 10 · 127110.1021/nl903868w ↗
26. Mak K. F. · Nat. Mater. · 2013 · 12 · 20710.1038/nmat3505 ↗
27. Chakraborty B. · Phys. Rev. B · 2012 · 85 · 16140310.1103/PhysRevB.85.161403 ↗
28. Tongay S. · Nano Lett. · 2013 · 13 · 283110.1021/nl4011172 ↗
29. Dey S. · Chem.—Asian J. · 2013 · 8 · 178010.1002/asia.201300174 ↗
30. Ross J. S. · Nat. Commun. · 2013 · 4 · 147410.1038/ncomms2498 ↗
31. Mouri S. · Nano Lett. · 2013 · 13 · 594410.1021/nl403036h ↗
32. Lin J. · Appl. Phys. Lett. · 2013 · 103 · 06310910.1063/1.4818463 ↗
33. Fang H. · Nano Lett. · 2013 · 13 · 199110.1021/nl400044m ↗
34. Dolui K. · Phys. Rev. B · 2013 · 88 · 07542010.1103/PhysRevB.88.075420 ↗
35. Perkins F. K. · Nano Lett. · 2013 · 13 · 66810.1021/nl3043079 ↗
36. Du Y. · IEEE Electron Device Lett. · 2013 · 34 · 132810.1109/LED.2013.2277311 ↗
37. Wu C.-I. · Appl. Phys. Lett. · 2006 · 88 · 15210410.1063/1.2192982 ↗
38. Li G. · Appl. Phys. Lett. · 2006 · 88 · 25350310.1063/1.2212270 ↗
39. Huang J. · Adv. Mater. · 2007 · 19 · 73910.1002/adma.200601040 ↗
40. Liao H.-H. · Appl. Phys. Lett. · 2008 · 92 · 17330310.1063/1.2918983 ↗
41. Huang J. · Adv. Mater. · 2008 · 20 · 41510.1002/adma.200701101 ↗
42. Huang J. · Adv. Funct. Mater. · 2007 · 17 · 196610.1002/adfm.200700051 ↗
43. Xu Z. · Adv. Funct. Mater. · 2009 · 19 · 122710.1002/adfm.200801286 ↗
44. Lee C. · ACS Nano · 2010 · 4 · 269510.1021/nn1003937 ↗