journal article·2016-01-26

Flexible Self-Powered GaN Ultraviolet Photoswitch with Piezo-Phototronic Effect Enhanced On/Off Ratio

Mingzeng Peng, Yudong Liu, Aifang Yu, Yang Zhang, Caihong Liu, Jingyu Liu, Wei Wu, Ke Zhang, Xieqing Shi, Jinzong Kou, Junyi Zhai, Zhong Lin Wang

ACS Nano· Volume 10· Issue 1
Publisher page

Abstract

Flexible self-powered sensing is urgently needed for wearable, portable, sustainable, maintenance-free and long-term applications. Here, we developed a flexible and self-powered GaN membrane-based ultraviolet (UV) photoswitch with high on/off ratio and excellent sensitivity. Even without any power supply, the driving force of UV photogenerated carriers can be well boosted by the combination of both built-in electric field and piezoelectric polarization field. The asymmetric metal-semiconductor-metal structure has been elaborately utilized to enhance the carrier separation and transport for highly sensitive UV photoresponse. Its UV on/off ratio and detection sensitivity reach to 4.67 × 10(5) and 1.78 × 10(12) cm·Hz(0.5) W(1-), respectively. Due to its excellent mechanical flexibility, the piezoelectric polarization field in GaN membrane can be easily tuned/controlled based on piezo-phototronic effect. Under 1% strain, a stronger and broader depletion region can be obtained to further enhance UV on/off ratio up to 154%. As a result, our research can not only provide a deep understanding of local electric field effects on self-powered optoelectronic detection, but also promote the development of self-powered flexible optoelectronic devices and integrated systems.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · Gas Sensing Nanomaterials and Sensors · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China

School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, United States

Funding

National Natural Science Foundation of China · Chinese Academy of Sciences · Central People's Government of the People's Republic of China

References (38)

Show source-provided references
1. 10.1016/j.nantod.2010.09.00110.1016/j.nantod.2010.09.001 ↗
2. 10.1002/adma.20110295810.1002/adma.201102958 ↗
3. 10.1002/adma.20130444710.1002/adma.201304447 ↗
4. 10.1002/adma.20090410210.1002/adma.200904102 ↗
5. 10.1126/science.118238310.1126/science.1182383 ↗
6. 10.1002/adfm.20100114010.1002/adfm.201001140 ↗
7. 10.1039/C4NR01665C10.1039/C4NR01665C ↗
8. 10.1002/adma.20130545710.1002/adma.201305457 ↗
9. 10.1021/nl203268410.1021/nl2032684 ↗
10. 10.1002/aelm.20150016910.1002/aelm.201500169 ↗
11. 10.1002/adma.20120448810.1002/adma.201204488 ↗
12. 10.1016/j.nanoen.2014.11.03710.1016/j.nanoen.2014.11.037 ↗
13. 10.1002/adma.20130180210.1002/adma.201301802 ↗
14. Nakamura S. · 200010.1007/978-3-662-04156-7 ↗
15. 10.1038/nphoton.2009.3210.1038/nphoton.2009.32 ↗
16. 10.1002/adma.20110258510.1002/adma.201102585 ↗
17. 10.1063/1.366058010.1063/1.3660580 ↗
18. 10.1021/nn102287810.1021/nn1022878 ↗
19. 10.1002/adma.20110436510.1002/adma.201104365 ↗
20. 10.1021/acsnano.5b0007210.1021/acsnano.5b00072 ↗
21. 10.1021/nl202619d10.1021/nl202619d ↗
22. 10.1002/adma.20140282410.1002/adma.201402824 ↗
23. 10.1021/nn401246y10.1021/nn401246y ↗
24. 10.1021/nn400017610.1021/nn4000176 ↗
25. 10.1038/nmat262910.1038/nmat2629 ↗
26. 10.1016/j.nanoen.2014.12.00310.1016/j.nanoen.2014.12.003 ↗
27. 10.1063/1.489375710.1063/1.4893757 ↗
28. 10.1109/LPT.2008.200650610.1109/LPT.2008.2006506 ↗
29. 10.1002/pssc.20100088410.1002/pssc.201000884 ↗
30. 10.1149/1.271839310.1149/1.2718393 ↗
31. 10.1063/1.489929710.1063/1.4899297 ↗
32. 10.1038/nphoton.2013.25310.1038/nphoton.2013.253 ↗
33. 10.1002/adma.20110459710.1002/adma.201104597 ↗
34. 10.1063/1.243376810.1063/1.2433768 ↗
35. 10.1002/aenm.20140039210.1002/aenm.201400392 ↗
36. 10.1016/j.nantod.2010.10.00810.1016/j.nantod.2010.10.008 ↗
37. Consonni V. · 2014
38. 10.1002/adma.20100027810.1002/adma.201000278 ↗