journal article·2014-08-26

Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection

Yung-Huang Chang, Wenjing Zhang, Yihan Zhu, Yu Han, Jiang Pu, Jan-Kai Chang, Wei-Ting Hsu, Jing-Kai Huang, Chang-Lung Hsu, Ming-Hui Chiu, Taishi Takenobu, Henan Li, Chih-I Wu, Wen-Hao Chang, Andrew Thye Shen Wee, Lain-Jong Li

ACS Nano· Volume 8· Issue 8
Publisher page

Abstract

Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 11529, Taiwan

Department of Physics, National University of Singapore, 117542 Singapore

SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education, Guangdong Province, Shenzhen University, Shenzhen 518060, China

Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia

Department of Advanced Science and Engineering, Waseda University, Tokyo 169-8555, Japan

Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan

Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan

Department of Applied Physics, Kagami Memorial Laboratory for Material Science and Technology, Waseda University, Tokyo 169-8555, Japan

School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore

Funding

Ministry of Education, Culture, Sports, Science, and Technology · Air Force Office of Scientific Research · National Science Council Taiwan · Academia Sinica · Japan Society for the Promotion of Science

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