journal article·2013-06-25

Controlled Synthesis and Transfer of Large-Area WS2 Sheets: From Single Layer to Few Layers

Ana Laura Elías, Néstor Perea-López, Andrés Castro-Beltrán, Ayse Berkdemir, Ruitao Lv, Simin Feng, Aaron D. Long, Takuya Hayashi, Yoong Ahm Kim, Morinobu Endo, Humberto R. Gutiérrez, Nihar R. Pradhan, Luis Balicas, Thomas E. Mallouk, Florentino López-Urías, Humberto Terrones, Mauricio Terrones

ACS Nano· Volume 7· Issue 6
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Abstract

The isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. In this account, a controlled thermal reduction-sulfurization method is used to synthesize large-area (~1 cm(2)) WS2 sheets with thicknesses ranging from monolayers to a few layers. During synthesis, WOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures (750-950 °C). An efficient route to transfer the synthesized WS2 films onto different substrates such as quartz and transmission electron microscopy (TEM) grids has been satisfactorily developed using concentrated HF. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of single-, bi-, and few-layered WS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layers, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This method has also proved successful in the synthesis of heterogeneous systems of MoS2 and WS2 layers, thus shedding light on the controlled production of heterolayered devices from transition metal chalcogenides.
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Research context

OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

Facultad de Ingeniería Mecánica y Eléctrica (FIME), Universidad Autónoma de Nuevo León, Avenida Universidad s/n Ciudad Universitaria, San Nicolás de los Garza, NL 66450, México

Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano, 380-8553, Japan

Department of Physics & Astronomy 102, Natural Science Building, University of Louisville, Louisville, Kentucky 40292, United States

National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, United States

Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

Advanced Materials Department, IPICyT, San Luis Potosí, SLP 78216, México

Department of Materials Science and Engineering & Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

Research Center for Exotic Nanocarbons (JST), Shinshu University, Wakasato 4-17-1, Nagano, 380-8553, Japan

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