journal article·2013-09-24

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

Gwan-Hyoung Lee, Young-Jun Yu, Xu Cui, Nicholas Petrone, Chul-Ho Lee, Min Sup Choi, Dae-Yeong Lee, Changgu Lee, Won Jong Yoo, Kenji Watanabe, Takashi Taniguchi, Colin Nuckolls, Philip Kim, James Hone

ACS Nano· Volume 7· Issue 9
Publisher page

Abstract

Atomically thin forms of layered materials, such as conducting graphene, insulating hexagonal boron nitride (hBN), and semiconducting molybdenum disulfide (MoS2), have generated great interests recently due to the possibility of combining diverse atomic layers by mechanical "stacking" to create novel materials and devices. In this work, we demonstrate field-effect transistors (FETs) with MoS2 channels, hBN dielectric, and graphene gate electrodes. These devices show field-effect mobilities of up to 45 cm(2)/Vs and operating gate voltage below 10 V, with greatly reduced hysteresis. Taking advantage of the mechanical strength and flexibility of these materials, we demonstrate integration onto a polymer substrate to create flexible and transparent FETs that show unchanged performance up to 1.5% strain. These heterostructure devices consisting of ultrathin two-dimensional (2D) materials open up a new route toward high-performance flexible and transparent electronics.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Graphene research and applications · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States

Samsung-SKKU Graphene Center (SSGC), Suwon, 440-746, Korea

School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi 440-746, Korea

Creative Research Center for Graphene Electronics, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon, 305-700, Korea

Department of Physics, Columbia University, New York, New York 10027, United States

Department of Chemistry, Columbia University, New York, New York 10027, United States

SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi 440-746, Korea

National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan

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