journal article·2014-06-24

Energy Level Modification in Lead Sulfide Quantum Dot Thin Films through Ligand Exchange

Patrick R. Brown, Donghun Kim, Richard R. Lunt, Ni Zhao, Moungi G. Bawendi, Jeffrey C. Grossman, Vladimir Bulović

ACS Nano· Volume 8· Issue 6
Publisher page

Abstract

The electronic properties of colloidal quantum dots (QDs) are critically dependent on both QD size and surface chemistry. Modification of quantum confinement provides control of the QD bandgap, while ligand-induced surface dipoles present a hitherto underutilized means of control over the absolute energy levels of QDs within electronic devices. Here, we show that the energy levels of lead sulfide QDs, measured by ultraviolet photoelectron spectroscopy, shift by up to 0.9 eV between different chemical ligand treatments. The directions of these energy shifts match the results of atomistic density functional theory simulations and scale with the ligand dipole moment. Trends in the performance of photovoltaic devices employing ligand-modified QD films are consistent with the measured energy level shifts. These results identify surface-chemistry-mediated energy level shifts as a means of predictably controlling the electronic properties of colloidal QD films and as a versatile adjustable parameter in the performance optimization of QD optoelectronic devices.
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Research context

OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Nanocluster Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, Michigan 48824, United States

Department of Electronic Engineering, Chinese University of Hong Kong, Shatin, Hong Kong

Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Funding

National Science Foundation · Samsung · Hertz Foundation

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