Multilevel Nonvolatile Ferroelectric Diode Employing HfZrO x and Metal Oxynitride Semiconductor for Neuromorphic Computing
Source abstract
Abstract
Metal oxide semiconductors (OSs) are now facing a new paradigm across wide research communities beyond the display industry. Despite the literature on ferroelectric thin-film transistors (FeTFTs) using fluorite-structured materials, the wide-bandgap nature and oxygen vacancy (V O ) of OSs are challenges to realize high-performance FeTFTs. In this paper, a metal oxynitride semiconductor (ONS) featuring a narrow bandgap and V O tolerance was integrated with a HfZrO x (HZO) thin film. A two-terminal (2T) ferroelectric diode (FD) which does not require thin HZO and selector was fabricated, showing anticlockwise hysteresis with an on/off ratio of ∼5 × 10 4 and excellent uniformity. An HZO/ZnON FD exhibited polarization-dependent resistive switching, and multilevel nonvolatile characteristics were utilized for neuromorphic computing. This study investigates an HZO/ZnON ferroelectric device and its operation as an artificial synapse, which has rarely been reported so far.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Computer Engineering, and Inter-university Semiconductor Research Center
Seoul National University
Funding
Ministry of Science and ICT, South Korea
References (56)
Show source-provided references
1. 10.1002/adfm.20231611910.1002/adfm.202316119 ↗
2. 10.1038/s41467-023-43941-510.1038/s41467-023-43941-5 ↗
3. 10.1002/adma.20220490410.1002/adma.202204904 ↗
4. 10.1109/JEDS.2023.330712410.1109/JEDS.2023.3307124 ↗
5. 10.1038/s41565-023-01361-y10.1038/s41565-023-01361-y ↗
6. Lomenzo P. D. · 2019 · 1
7. 10.1002/aelm.20180052210.1002/aelm.201800522 ↗
8. 10.1021/acsaelm.0c0018410.1021/acsaelm.0c00184 ↗
9. 10.1063/1.512850210.1063/1.5128502 ↗
10. 10.1038/s41928-020-00492-710.1038/s41928-020-00492-7 ↗
11. 10.1126/sciadv.adk152510.1126/sciadv.adk1525 ↗
12. 10.1109/LED.2015.244535210.1109/LED.2015.2445352 ↗
13. 10.1063/5.000711110.1063/5.0007111 ↗
14. 10.1063/1.509003610.1063/1.5090036 ↗
15. 10.35848/1882-0786/ab9a9210.35848/1882-0786/ab9a92 ↗
16. 10.1109/JEDS.2020.300878910.1109/JEDS.2020.3008789 ↗
17. 10.1038/s43246-024-00495-310.1038/s43246-024-00495-3 ↗
18. 10.1002/adfm.20240909510.1002/adfm.202409095 ↗
19. 10.1126/sciadv.adn134510.1126/sciadv.adn1345 ↗
20. 10.1038/s41467-024-46878-510.1038/s41467-024-46878-5 ↗
21. 10.1039/D4NR02096K10.1039/D4NR02096K ↗
22. Chen Y. H. · 2023 · 1
23. 10.1002/aelm.20240051610.1002/aelm.202400516 ↗
24. 10.1109/LED.2024.335552310.1109/LED.2024.3355523 ↗
25. 10.1109/LED.2024.341140410.1109/LED.2024.3411404 ↗
26. 10.1002/aelm.20210008210.1002/aelm.202100082 ↗
27. 10.1109/TED.2024.340877610.1109/TED.2024.3408776 ↗
28. 10.1109/LED.2022.322968010.1109/LED.2022.3229680 ↗
29. 10.1002/sdtp.1781910.1002/sdtp.17819 ↗
30. 10.1109/TED.2024.336001010.1109/TED.2024.3360010 ↗
31. 10.1109/TED.2024.339009710.1109/TED.2024.3390097 ↗
32. Bae H. · 2021 · 1
33. 10.1109/LED.2022.322333510.1109/LED.2022.3223335 ↗
34. 10.1038/srep1346710.1038/srep13467 ↗
35. 10.1021/jp107008310.1021/jp1070083 ↗
36. 10.1021/acsaelm.2c0153910.1021/acsaelm.2c01539 ↗
37. 10.1002/aelm.20200088310.1002/aelm.202000883 ↗
38. 10.1002/adfm.20231224010.1002/adfm.202312240 ↗
39. 10.1002/aelm.20220130610.1002/aelm.202201306 ↗
40. 10.1021/acsaelm.1c0108810.1021/acsaelm.1c01088 ↗
41. 10.1039/D1TC01451J10.1039/D1TC01451J ↗
42. 10.36463/idw.2023.019410.36463/idw.2023.0194 ↗
43. 10.1039/D4NR03333G10.1039/D4NR03333G ↗
44. 10.1038/srep0145910.1038/srep01459 ↗
45. 10.1063/1.509604210.1063/1.5096042 ↗
46. NIST X-ray Photoelectron Spectroscopy Database, NIST Standard Reference Database Number 20 , 2000. https://srdata.nist.gov/xps/.
47. 10.1063/1.512056510.1063/1.5120565 ↗
48. 10.1002/adfm.20230712010.1002/adfm.202307120 ↗
49. 10.1063/5.014278910.1063/5.0142789 ↗
50. 10.1016/S0040-6090(99)00344-210.1016/S0040-6090(99)00344-2 ↗
51. 10.1146/annurev.physiol.64.092501.11454710.1146/annurev.physiol.64.092501.114547 ↗
52. 10.1109/TCAD.2018.278972310.1109/TCAD.2018.2789723 ↗
53. 10.1002/advs.20250056810.1002/advs.202500568 ↗
54. 10.1109/JEDS.2024.337388910.1109/JEDS.2024.3373889 ↗
55. 10.1109/TNANO.2013.225099510.1109/TNANO.2013.2250995 ↗
56. 10.3389/fnins.2019.0009510.3389/fnins.2019.00095 ↗