Nonvolatile C60 Self-Assembled Monolayer-Induced Photomemory Elements in Pentacene Organic Memory Field Effect Transistors
Source abstract
Abstract
We have developed a nonvolatile pentacene/C 60 self-assembled monolayer (SAM) organic field effect transistor (OFET) memory device that operates with a high on/off current ratio of 10 5, leveraging an electric field-induced charge transfer for data storage. We also have successfully demonstrated a novel nonvolatile OFET photomemory utilizing pentacene and a C 60 self-assembled monolayer (SAM), initially reaching 10 7 before stabilizing at 10 3 . This highlights its effective charge retention and emission, varying with light exposure, underscoring the C 60 SAM’s pivotal role in modulating device performance across different lighting conditions. This high ratio is achieved through an electric field-induced charge transfer mechanism, wherein application of a gate voltage causes electrons to move from pentacene to the C 60 SAM, effectively changing the device’s conductive state. Additionally, the device showcases a unique photoresponsive behavior, where illumination not only augments electron transfer but also introduces complexities such as an increased off current due to the low recombination rate of electrons and holes. Despite this challenge, the ability to control memory states through both electrical and optical means marks a significant step forward, as it paves the way for multifunctional, energy-efficient memory devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Fullerene Chemistry and Applications · Advanced Memory and Neural Computing · Molecular Junctions and Nanostructures
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering Hongik University 72-1, Sangsu-dong, Mapo-gu, Seoul 04066, Korea
Funding
National Research Foundation of Korea · Hongik University
References (22)
Show source-provided references
1. 10.1002/adfm.20190460210.1002/adfm.201904602 ↗
2. 10.1039/D0QM00330A10.1039/D0QM00330A ↗
3. 10.1021/acsami.6b0379210.1021/acsami.6b03792 ↗
4. 10.1002/aelm.20190056910.1002/aelm.201900569 ↗
5. 10.1002/1521-4095(20020104)14:1<51::AID-ADMA51>3.0.CO;2-#10.1002/1521-4095(20020104)14:1<51::AID-ADMA51>3.0.CO;2-# ↗
6. 10.1016/j.mee.2005.04.08410.1016/j.mee.2005.04.084 ↗
7. 10.1039/C4PY01213E10.1039/C4PY01213E ↗
8. 10.1021/jp300708z10.1021/jp300708z ↗
9. 10.1088/1361-6463/aa7e3f10.1088/1361-6463/aa7e3f ↗
10. 10.1002/adfm.20090167710.1002/adfm.200901677 ↗
11. 10.1002/adfm.20120341710.1002/adfm.201203417 ↗
12. 10.1002/adma.20060256410.1002/adma.200602564 ↗
13. 10.1039/C6CP00432F10.1039/C6CP00432F ↗
14. 10.1039/D2TC01271E10.1039/D2TC01271E ↗
15. 10.1088/2053-1583/ab0af110.1088/2053-1583/ab0af1 ↗
16. 10.1038/srep1209410.1038/srep12094 ↗
17. 10.1039/c3cc48569b10.1039/c3cc48569b ↗
18. 10.1002/ange.20110761810.1002/ange.201107618 ↗
19. 10.1002/smsc.20210010910.1002/smsc.202100109 ↗
20. 10.1002/adma.20130293410.1002/adma.201302934 ↗
21. 10.1103/PhysRevB.44.1374710.1103/PhysRevB.44.13747 ↗
22. 10.1016/j.synthmet.2005.10.00110.1016/j.synthmet.2005.10.001 ↗