Controlled Growth of Ultrathin Graphitic Carbon Nitride Films by Chemical Vapor Deposition

Efforts have been relentlessly pursued to develop high-quality and uniform graphitic carbon nitride (g-C 3 N 4 ) films. In this work, a thermal chemical vapor deposition (CVD) method was developed for the synthesis of homogeneous g-C 3 N 4 films on various substrates using melamine powder as a precursor. The film produced on a silicon wafer is ultrathin, down to 10 nm, with good crystallinity. By changing the precursor and extending the polymerization time, it is also possible to deposit a homogeneous free-standing film on top of anodic aluminum oxide (AAO). The film can be peeled off after the sample is immersed in distilled water for 10 min. Notably, upon characterization, the chemical features and composition were found to closely resemble those of the ideal g-C 3 N 4 . This research offers a method for growing g-C 3 N 4 films, which is crucial for broadening their utility beyond catalysis and potentially paving the way for future applications in optoelectronic devices and beyond.