journal article·2024-06-03

Defected BN Substrate Induces the Transition from Schottky to Ohmic Contact in Two-Dimensional Metals–Semiconductor Junctions

Chengfeng Pan, Anqi Shi, Wang Gong, Wei Chen, Jing Yan, Xiuyun Zhang, Zhaobo Zhou, Bing Wang, Yongtao Li, Xianghong Niu

ACS Materials Letters· Volume 6· Issue 6
Publisher page

Abstract

Although Ohmic contact can be formed in two-dimensional (2D) metal–semiconductor junctions (MSJs) due to the weak Fermi level pinning (FLP) effect, it is inconvenient to prepare different 2D metals matching various semiconductors’ work functions well in practice. The weak FLP in 2D MSJs allows their Fermi levels to be easily altered by the impact of the substrate materials. Therefore, utilizing substrates to improve the contact properties of 2D MSJs can be a feasible strategy. Herein, we systematically studied the effect of BN with a B or N vacancy on 2D MSJs. Due to interlayer charge transfer caused by atomic vacancies, the band-edge rigidly shifts, ranging from 0.4 to 1.1 eV. Transmission coefficient and IV curve indicate that the BN substrate indeed induces the transition from Schottky to Ohmic contact. Our work paves the way for the programming of high-performance nanoscale electronic devices.
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Research context

OpenAlex topics: Graphene research and applications · 2D Materials and Applications · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), School of Science, Library, Nanjing University of Posts & Telecommunications, Nanjing 210023, China

Department of Civil and Architectural Engineering, Tennessee State University, Nashville, Tennessee 37209, United States

College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, China

Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University in Prague, Prague 12843, Czech Republic

Institute for Computational Materials Science, Joint Center for Theoretical Physics (JCTP), School of Physics and Electronics, Henan University, Kaifeng, 475004, China

Funding

Jiangsu Provincial Department of Education · China Postdoctoral Science Foundation · Nanjing University of Posts and Telecommunications · Six Talent Peaks Project in Jiangsu Province · National Natural Science Foundation of China

References (48)

Show source-provided references
1. 10.1038/s41586-021-03472-910.1038/s41586-021-03472-9 ↗
2. 10.1063/5.015206410.1063/5.0152064 ↗
3. 10.1016/j.rinp.2023.10663510.1016/j.rinp.2023.106635 ↗
4. 10.1039/D3NR02518G10.1039/D3NR02518G ↗
5. 10.1021/acs.jpclett.0c0363510.1021/acs.jpclett.0c03635 ↗
6. 10.1021/acs.jpcc.3c0376110.1021/acs.jpcc.3c03761 ↗
7. 10.1038/s41928-021-00670-110.1038/s41928-021-00670-1 ↗
8. 10.1002/adma.20210842510.1002/adma.202108425 ↗
9. 10.1021/acsaelm.1c0122110.1021/acsaelm.1c01221 ↗
10. 10.1021/acs.jpclett.3c0035410.1021/acs.jpclett.3c00354 ↗
11. 10.1021/jacs.8b1221210.1021/jacs.8b12212 ↗
12. 10.1016/j.apsusc.2023.15655710.1016/j.apsusc.2023.156557 ↗
13. 10.1021/acs.jpclett.0c0366310.1021/acs.jpclett.0c03663 ↗
14. 10.1021/acs.jpcc.1c0180010.1021/acs.jpcc.1c01800 ↗
15. 10.1016/j.apsusc.2023.15830410.1016/j.apsusc.2023.158304 ↗
16. 10.1038/s41427-023-00517-510.1038/s41427-023-00517-5 ↗
17. 10.1021/acsami.2c0727810.1021/acsami.2c07278 ↗
18. 10.1021/acssensors.3c0192410.1021/acssensors.3c01924 ↗
19. 10.1007/s12274-021-3294-210.1007/s12274-021-3294-2 ↗
20. 10.1103/PhysRevB.83.23531210.1103/PhysRevB.83.235312 ↗
21. 10.1021/nl202725w10.1021/nl202725w ↗
22. 10.1038/nnano.2010.17210.1038/nnano.2010.172 ↗
23. 10.1063/5.001089110.1063/5.0010891 ↗
24. 10.1103/PhysRevLett.102.19550510.1103/PhysRevLett.102.195505 ↗
25. 10.1021/nl901149710.1021/nl9011497 ↗
26. 10.1063/5.002109310.1063/5.0021093 ↗
27. 10.1021/acsanm.2c0147810.1021/acsanm.2c01478 ↗
28. 10.1038/s41699-021-00253-w10.1038/s41699-021-00253-w ↗
29. 10.1021/acssuschemeng.5b0018210.1021/acssuschemeng.5b00182 ↗
30. 10.1021/acsaem.1c0098510.1021/acsaem.1c00985 ↗
31. 10.1021/acsphotonics.2c0043310.1021/acsphotonics.2c00433 ↗
32. 10.1021/acssensors.9b0099210.1021/acssensors.9b00992 ↗
33. 10.1021/ja312055410.1021/ja3120554 ↗
34. 10.1021/acsaelm.3c0067110.1021/acsaelm.3c00671 ↗
35. 10.1016/j.jssc.2020.12151110.1016/j.jssc.2020.121511 ↗
36. 10.1021/acs.jpcc.1c0328610.1021/acs.jpcc.1c03286 ↗
37. 10.1063/5.003911110.1063/5.0039111 ↗
38. 10.1021/acsami.2c1315110.1021/acsami.2c13151 ↗
39. 10.1038/s41586-018-0129-810.1038/s41586-018-0129-8 ↗
40. 10.1126/sciadv.160006910.1126/sciadv.1600069 ↗
41. 10.1098/rspa.1939.005110.1098/rspa.1939.0051 ↗
42. 10.1002/pssb.20180059710.1002/pssb.201800597 ↗
43. 10.1021/acsanm.9b0137510.1021/acsanm.9b01375 ↗
44. 10.1038/s41928-021-00641-610.1038/s41928-021-00641-6 ↗
45. 10.1021/acs.nanolett.1c0219210.1021/acs.nanolett.1c02192 ↗
46. 10.1021/acs.jpcc.0c0404210.1021/acs.jpcc.0c04042 ↗
47. 10.1103/PhysRevB.105.07542310.1103/PhysRevB.105.075423 ↗
48. 10.1103/PhysRevResearch.3.03326410.1103/PhysRevResearch.3.033264 ↗