journal article·2024-02-05

Humidity Sensor Synaptic Device Based on Bilayer p–n Heterojunction Transistors for Maintaining Humidity Homeostasis

Yanmei Sun, Zhiyuan Li, Qingkun Li, Yufei Wang, Xinru Meng, Qi Yuan

ACS Materials Letters· Volume 6· Issue 2
Publisher page

Abstract

Emerging artificial synaptic devices, endowed with the ability to process electronic signals using neuromorphic functions, mimic the operation of biological nervous systems. In this work, a humidity-sensitive artificial synaptic device is fabricated, which not only detects humidity but also generates a remarkable synaptic signal simultaneously. The device effectively attains a synaptic current response in diverse humidity environments due to the utilization of a humidity-sensitive CMC-Na+GO/DCNBT-IDT bilayer p–n heterojunction transistor. With an increase in humidity, the concentrations of water molecules, hydroxyl groups, and protons in the medium increase, resulting in a more efficient ion transport effect that enhances the device conductivity. Ultimately, the fabricated synaptic device was utilized to achieve a negative feedback system for regulating humidity homeostasis.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Photoreceptor and optogenetics research · Conducting polymers and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Electronic Engineering, Heilongjiang University, Harbin 150080, China

Heilongjiang Provincial Key Laboratory of Micro-Nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China

Funding

Natural Science Foundation of Heilongjiang Province · National Natural Science Foundation of China

References (24)

Show source-provided references
1. 10.1126/science.269.5230.156010.1126/science.269.5230.1560 ↗
2. 10.1002/adfm.20210844010.1002/adfm.202108440 ↗
3. 10.1143/JJAP.49.04DK0210.1143/JJAP.49.04DK02 ↗
4. 10.1021/acs.jpcc.8b0874410.1021/acs.jpcc.8b08744 ↗
5. 10.1088/1361-6528/ac5f9610.1088/1361-6528/ac5f96 ↗
6. 10.1002/adfm.20211305010.1002/adfm.202113050 ↗
7. 10.1038/nmat475610.1038/nmat4756 ↗
8. 10.1002/aelm.20180074510.1002/aelm.201800745 ↗
9. 10.1038/s41467-023-39394-510.1038/s41467-023-39394-5 ↗
10. 10.1063/1.504535110.1063/1.5045351 ↗
11. 10.1063/5.010207610.1063/5.0102076 ↗
12. 10.1039/D1TC00715G10.1039/D1TC00715G ↗
13. 10.1039/D1TC04180K10.1039/D1TC04180K ↗
14. 10.1007/s12598-020-01524-z10.1007/s12598-020-01524-z ↗
15. 10.1016/j.snb.2018.12.15410.1016/j.snb.2018.12.154 ↗
16. 10.1021/acsami.0c1649510.1021/acsami.0c16495 ↗
17. 10.1021/acs.nanolett.8b0302610.1021/acs.nanolett.8b03026 ↗
18. 10.1111/cote.1258110.1111/cote.12581 ↗
19. 10.1109/JSEN.2021.313119610.1109/JSEN.2021.3131196 ↗
20. 10.1007/s12633-021-01594-310.1007/s12633-021-01594-3 ↗
21. 10.1002/aisy.20210001710.1002/aisy.202100017 ↗
22. 10.1002/advs.20220201910.1002/advs.202202019 ↗
23. 10.1016/j.isci.2022.10524010.1016/j.isci.2022.105240 ↗
24. 10.1002/adfm.20220574410.1002/adfm.202205744 ↗