Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity
Abstract
Research context
OpenAlex topics: Perovskite Materials and Applications · Electronic and Structural Properties of Oxides · Quantum Dots Synthesis And Properties
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Affiliations
Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
Institute of Electronics and Telecommunications of Rennes (IETR), UMR CNRS 6164, University of Rennes 1, 35042 Rennes, France
School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
Department of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, Modena, 41125, Italy
Department of Chemical and Biomolecular Engineering and Department of Material Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
Department of Electrical Engineering, University of Louisville, Louisville, Kentucky 40292, United States
Univ Rennes, INSA Rennes, CNRS, Institut FOTON - UMR 6082, F-35000 Rennes, France
Univ Rennes, ENSCR, INSA Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) - UMR 6226, F-35000 Rennes, France
Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
Funding
Office of Energy Efficiency and Renewable Energy · Laboratory Directed Research and Development · Office of Science · Division of Chemical, Bioengineering, Environmental, and Transport Systems · Institut Universitaire de France · Rice University