journal article·2026-06-12Open access

Strain in Metal Halide Perovskite Thin Films - Interfacial Mechanical Coupling

Zihan Zhang, Collin A. Sindt, Gabriel R. McAndrews, Samantha C. Kaczaral, Wenhan Ou, Nicholas J. Weadock, Michael D. McGehee, Michael F. Toney

ACS Energy Letters· Volume 11· Issue 6

Abstract

Hybrid organic-inorganic metal halide perovskites (MHPs) are promising semiconductors for photovoltaics and optoelectronics, but their commercial viability is limited by instability, particularly strain induced by mismatch in coefficients of thermal expansion (CTE) between the perovskite film and substrate. Here, we investigate strain development and relaxation in MHP thin films using in situ bending and Grazing Incidence Wide-Angle X-ray Scattering (GIWAXS). We quantify the film-substrate interfacial mechanical coupling and identify interfacial slippage beyond a critical strain (∼0.4%), with Br-2PACz exhibiting comparatively stronger interfacial mechanical coupling among common interface modifiers. Time-resolved GIWAXS reveals reversible macrostrain during thermal cycling driven by CTE mismatch. Leveraging this behavior, we introduce a prestrain process that induces persistent compressive strain after cooling, with partial relaxation over time. These results provide insight into interfacial mechanical coupling and strain dynamics, offering a framework for strain engineering in perovskite devices.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Perovskite Materials and Applications · Chemical and Physical Properties of Materials · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics

University of Colorado Boulder

Department of Chemical and Biological Engineering

Materials Science and Engineering Program

Renewable and Sustainable Energy Institute (RASEI)

Funding

Office of Energy Efficiency and Renewable Energy · Office of Naval Research

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